Test grade silicon wafers-3

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates that we have in stock!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 300 ± 10 µm 30 10 30
6 DSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° <0.0035 Ohmcm 150.0 ± 0.2 mm 430 ± 5 µm 60
6 DSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° <0.0035 Ohmcm 150.0 ± 0.2 mm 430 ± 5 µm 60
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.005 – 0.025 Ohmcm 150 ± 0.2mm 400 ± 10µm 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.2 ° 1 – 20 Ohmcm 150 ± 0.2 mm 400 ± 5 µm 50 2 50
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 2.55 – 3.45 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 1 – 5 Ohmcm 150 ± 0.2 mm 650 ± 5 µm 60 2 60
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,20   90 ±   5.0 °,  37.50 ±  2.50 mm 0.0 ± 0.2 ° 0.017 – 0.022 Ohmcm 150 ± 0.2 mm 381 ± 5 µm 1
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° >1 Ohmcm 150 ± 0.2 mm 525 ± 12.5 µm
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 5 Ohmcm 150 ± 0.2 mm 450 ± 10 µm 60 3 60
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.007 – 0.020 Ohmcm 150.0 ± 0.2 mm 400 ± 25 µm 29,99 2,99 29,99
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° < 0,005 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 60 60
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0 ± 0.5° 1 – 20 Ohmcm 150 ± 0.5 mm 500 ± 25 µm
6 DSP Boron P 100 57,5 ± 0,5 110 ± 0,30 0.0 ± 0.5 ° 2 – 10 Ohmcm 150 ± 0.2 mm 380 ± 4 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.2° 1 – 10 Ohmcm 150 ± 0.2 mm 600 ± 5 µm 20 2 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.1° 0.07 – 0.13 Ohmcm 150 ± 0.2 mm 500 ± 5 µm 25 1
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 1 – 5 Ohmcm 150 ± 0.2 mm 300 ± 5 µm 2
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° 0.001 – 0.02 Ohmcm 150 ± 0.2 mm 650 ± 5 µm 1
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° 6 – 8.5 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 5 60
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  37.50 ±  2.50 mm 0.0 ± 0.5 ° 0.020 – 0.025 Ohmcm 150 ± 0.2 mm 300 ± 7.5 µm 1,4
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.03 ° 2.4 – 3.6 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 40 3 40
6 DSP Boron P 100 57,5 ± 0,5 110 ± 0,30 0.0 ± 0.5 ° > 0.3 Ohmcm 150 ± 0.5 mm 400 ± 50 µm 60 30 60
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 6 – 8.5 Ohmcm 150.0 ± 0.2 mm 380 ± 10 µm 5 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 1 – 5 Ohmcm 150 ± 0.5 mm 400 ± 5 µm 30 1 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.1 ° 0.07 – 0.13 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 25 1
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.010 – 0.020 Ohmcm 150 ± 0.2 mm 1000 ± 5 µm
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 30 – 50 Ohmcm 150 ± 0.3 mm 300 ± 5 µm 30 1 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 2 – 20 Ohmcm 150 ± 0.2 mm 310 ± 10 µm 5
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.005 – 0.025 Ohmcm 150 ± 0.2 mm 290 ± 10 µm 5
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.005 – 0.025 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 29,99
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 3 – 5 Ohmcm 150 ± 0.5 mm 390 ± 7 µm 3
6 DSP Boron P 100 57,5 ± 2,0 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 30
6 DSP Boron P 100 47,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 3 – 7 Ohmcm 150 ± 0.2 mm 385 ± 5 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150 ± 0.2 mm 400 ± 5 µm 0,8
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150 ± 0.2 mm 600 ± 5 µm 0,8
6 DSP Boron P 100 47,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 70 – 130 Ohmcm 150 ± 0.5 mm 1000 ± 10 µm 50 5 50
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 150 ± 0.2 mm 400 ± 5 µm 40 1 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,25 0.0 ± 0.25° 1 – 10 Ohmcm 150 ± 0.5 mm 280 ± 1.5 µm 1,25
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150 ± 0.2 mm 650 ± 5 µm 1
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 400 ± 5 µm 30 2 29,99
6 DSP Boron P 100 57,5 ± 2,5 100 ± 0,50   90 ±   5.0 °,  20.00 ±  2.50 mm 0.0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.5 mm 483 ± 5 µm 20 4
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° 5 – 8.5 Ohmcm 150.0 ± 0.5 mm 380 ± 5 µm 5,5 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 1.0° 1 – 10 Ohmcm 150 ± 0.5 mm 600 ± 5 µm 80 5 80
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 1.0° 0.01 – 0.02 Ohmcm 150 ± 0.5 mm 620 ± 5 µm 80 5 80
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.2 ° 1 – 10 Ohmcm 150 ± 0.2 mm 600 ± 5 µm 0,8
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° > 10 Ohmcm 150 ± 0.5 mm 625 ± 15 µm 50 2 50
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1 – 3 Ohmcm 150 ± 0.5 mm 380 ± 12 µm 5 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.03 ° 2.4 – 3.6 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.03 ° 2.4 – 3.6 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 40 3 40

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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