PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches | Cust class | Dopant | Type | Orientation | PFL length | PFL direction | SFL | Off orientation | Resistivity | Diameter | Thickness | Bow | TTV | Warp |
6 | DSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,20 | 0.0 ± 0.1 ° | 1 – 20 Ohmcm | 150.0 ± 0.2 mm | 675 ± 5 µm | 60 | 3 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 30 – 50 Ohmcm | 150 ± 0.3 mm | 300 ± 5 µm | 30 | 1 | 30 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 150 ± 0.2 mm | 300 ± 10 µm | 50 | 5 | 50 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2° | 1 – 20 Ohmcm | 150 ± 0.5 mm | 250 ± 5 µm | 2 | 40 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 150 ± 0.5 mm | 283.5 ± 2.5 µm | 1,25 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2 ° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 650 ± 5 µm | 1 | |||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 0.010 – 0.020 Ohmcm | 150 ± 0.5 mm | 500 ± 10 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 0.010 – 0.020 Ohmcm | 150 ± 0.5 mm | 500 ± 10 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.50 mm | 0.0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.5 mm | 390 ± 5 µm | 38 | 5 | |
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 0,50 | 0 ± 0.5° | 3 – 7 Ohmcm | 150 ± 0.2 mm | 385 ± 5 µm | 40 | 5 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.5 mm | 0.0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.5 mm | 435 ± 5 µm | 38 | 5 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.5 mm | 0.0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.5 mm | 435 ± 5 µm | 38 | 5 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.2° | 1 – 20 Ohmcm | 150 ± 0.2 mm | 450 ± 5 µm | 20 | 2 | 50 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 90 ± 5.0 °, 37.50 ± 2.50 mm | 0.0 ± 0.5 ° | 0.020 – 0.025 Ohmcm | 150±0.2mm | 381µm -10+5µm | 1,4 | ||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 90 ± 5.0 °, 37.50 ± 2.50 mm | 0.0 ± 0.5 ° | 0.020 – 0.025 Ohmcm | 150 ± 0.2 mm | 300 ± 7.5 µm | 1,4 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 150 ± 0.5 mm | 390 ± 5 µm | 38 | 5 | ||
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 10 – 50 Ohmcm | 150 ± 0.5 mm | 400 ± 5 µm | 40 | 2 | 40 | |
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 10 – 50 Ohmcm | 150 ± 0.5 mm | 455 ± 5 µm | 40 | 2 | 40 | |
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 10 – 50 Ohmcm | 150 ± 0.5 mm | 475 ± 5 µm | 40 | 2 | 40 | |
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 70 – 130 Ohmcm | 150 ± 0.5 mm | 1000 ± 10 µm | 50 | 5 | 50 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.010 – 0.050 Ohmcm | 150 ± 0.3 mm | 400 ± 7 µm | 30 | 1 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 29,99 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 5 – 100 Ohmcm | 150 ± 0.2 mm | 380 ± 5 µm | 5 | 40 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.2° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 600 ± 5 µm | 20 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 5 Ohmcm | 150 ± 0.2 mm | 650 ± 10 µm | 49,99 | 1,99 | 49,99 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 380 ± 5 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 15 – 25 Ohmcm | 150 ± 0.5 mm | 400 ± 5 µm | 30 | 4 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 150 ± 0.5 mm | 390 ± 5 µm | 38 | 5 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.50 mm | 0.0 ± 0.5° | 1 – 10 Ohmcm | 150 ± 0.5 mm | 390 ± 5 µm | 38 | 5 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.5 mm | 0.0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.5 mm | 435 ± 5 µm | 38 | 5 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 15 – 25 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 4 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5 ° | 6 – 8.5 Ohmcm | 150.0 ± 0.2 mm | 380 ± 5 µm | 5 | 60 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 5,5 | 30 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2° | 0.015 – 0.025 Ohmcm | 150 ± 0.2 mm | 800 ± 5 µm | 150 | 1,5 | 150 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 6 – 8.5 Ohmcm | 150 ± 0.2 mm | 380 ± 10 µm | ||||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 29,99 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.007 – 0.020 Ohmcm | 150 ± 0.2 mm | 300 ± 5 µm | 1 | |||
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 1 | 0.0 ± 1° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 400 ± 20 µm | ||||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 6 – 8.5 Ohmcm | 150.0 ± 0.2 mm | 380 ± 10 µm | 5 | 40 | ||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2° | 0.015 – 0.025 Ohmcm | 150 ± 0.2 mm | 800 ± 5 µm | 150 | 1,5 | 150 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.50 mm | 0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.2 mm | 390 ± 5 µm | 38 | 5 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.50 mm | 0.0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.5 mm | 483 ± 5 µm | 40 | 5 | 40 |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.03 ° | 2.4 – 3.6 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 3 – 7 Ohmcm | 150 ± 0.2 mm | 385 ± 5 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 2.55 – 3.45 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | ||||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 30 Ohmcm | 150 ± 0.5 mm | 600 ± 10 µm | 20 | 0,7 | 30 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 0.010 – 0.020 Ohmcm | 150 ± 0.2 mm | 300 ± 10 µm | ||||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 0.015 – 0.025 Ohmcm | 150 ± 0.2 mm | 800 ± 5 µm | 150 | 1,5 | 150 |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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