Test grade silicon wafers-4

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

InchesCust classDopantTypeOrientationPFL lengthPFL directionSFLOff orientationResistivityDiameterThicknessBowTTVWarp
6DSPBoronP1000,0 ± 0,0110 ± 0,200.0 ± 0.1 °1 – 20 Ohmcm150.0 ± 0.2 mm675 ± 5 µm603
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°30 – 50 Ohmcm150 ± 0.3 mm300 ± 5 µm30130
6DSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.01 – 0.02 Ohmcm150 ± 0.2 mm300 ± 10 µm50550
6DSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.5°5 – 8.5 Ohmcm150 ± 0.5 mm525 ± 5 µm30230
6DSPBoronP10057,5 ± 2,5110 ± 0,200.0 ± 0.2°1 – 20 Ohmcm150 ± 0.5 mm250 ± 5 µm240
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 10 Ohmcm150 ± 0.5 mm283.5 ± 2.5 µm1,25
6DSPBoronP10057,5 ± 2,5110 ± 0,200.0 ± 0.2 °1 – 10 Ohmcm150 ± 0.2 mm650 ± 5 µm1
6DSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °0.010 – 0.020 Ohmcm150 ± 0.5 mm500 ± 10 µm30230
6DSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °0.010 – 0.020 Ohmcm150 ± 0.5 mm500 ± 10 µm30230
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.50 mm0.0 ± 0.5°5 – 7 Ohmcm150 ± 0.5 mm390 ± 5 µm385
6DSPBoronP10047,5 ± 2,5110 ± 0,500 ± 0.5°3 – 7 Ohmcm150 ± 0.2 mm385 ± 5 µm40540
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.5 mm0.0 ± 0.5°5 – 7 Ohmcm150 ± 0.5 mm435 ± 5 µm385
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.5 mm0.0 ± 0.5°5 – 7 Ohmcm150 ± 0.5 mm435 ± 5 µm385
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.2°1 – 20 Ohmcm150 ± 0.2 mm450 ± 5 µm20250
6DSPBoronP+10057,5 ± 2,5110 ± 1  90 ±   5.0 °,  37.50 ±  2.50 mm0.0 ± 0.5 °0.020 – 0.025 Ohmcm150±0.2mm381µm -10+5µm1,4
6DSPBoronP+10057,5 ± 2,5110 ± 1  90 ±   5.0 °,  37.50 ±  2.50 mm0.0 ± 0.5 °0.020 – 0.025 Ohmcm150 ± 0.2 mm300 ± 7.5 µm1,4
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 10 Ohmcm150 ± 0.5 mm390 ± 5 µm385
6DSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0°10 – 50 Ohmcm150 ± 0.5 mm400 ± 5 µm40240
6DSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0°10 – 50 Ohmcm150 ± 0.5 mm455 ± 5 µm40240
6DSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0°10 – 50 Ohmcm150 ± 0.5 mm475 ± 5 µm40240
6DSPBoronP10047,5 ± 2,5110 ± 0,500.0 ± 0.5 °70 – 130 Ohmcm150 ± 0.5 mm1000 ± 10 µm50550
6DSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.010 – 0.050 Ohmcm150 ± 0.3 mm400 ± 7 µm30130
6DSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.5°5 – 8.5 Ohmcm150 ± 0.5 mm525 ± 5 µm30229,99
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °5 – 100 Ohmcm150 ± 0.2 mm380 ± 5 µm540
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.2°1 – 10 Ohmcm150 ± 0.2 mm600 ± 5 µm20230
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 5 Ohmcm150 ± 0.2 mm650 ± 10 µm49,991,9949,99
6DSPBoronP10057,5 ± 2,5110 ± 10.0 ± 1.0°1 – 10 Ohmcm150 ± 0.2 mm380 ± 5 µm30230
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°15 – 25 Ohmcm150 ± 0.5 mm400 ± 5 µm30430
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 10 Ohmcm150 ± 0.5 mm390 ± 5 µm385
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.50 mm0.0 ± 0.5°1 – 10 Ohmcm150 ± 0.5 mm390 ± 5 µm385
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.5 mm0.0 ± 0.5°5 – 7 Ohmcm150 ± 0.5 mm435 ± 5 µm385
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°15 – 25 Ohmcm150 ± 0.5 mm525 ± 5 µm30430
6DSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.5 °6 – 8.5 Ohmcm150.0 ± 0.2 mm380 ± 5 µm560
6DSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.5°5 – 8.5 Ohmcm150 ± 0.5 mm525 ± 5 µm5,530
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°5 – 8.5 Ohmcm150 ± 0.5 mm525 ± 5 µm30230
6DSPBoronP+10057,5 ± 2,5110 ± 0,200.0 ± 0.2°0.015 – 0.025 Ohmcm150 ± 0.2 mm800 ± 5 µm1501,5150
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °6 – 8.5 Ohmcm150 ± 0.2 mm380 ± 10 µm
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°5 – 8.5 Ohmcm150 ± 0.5 mm525 ± 5 µm30229,99
6DSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.007 – 0.020 Ohmcm150 ± 0.2 mm300 ± 5 µm1
6DSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1°1 – 10 Ohmcm150 ± 0.2 mm400 ± 20 µm
6DSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.5°6 – 8.5 Ohmcm150.0 ± 0.2 mm380 ± 10 µm540
6DSPBoronP+10057,5 ± 2,5110 ± 0,200.0 ± 0.2°0.015 – 0.025 Ohmcm150 ± 0.2 mm800 ± 5 µm1501,5150
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.50 mm0 ± 0.5°5 – 7 Ohmcm150 ± 0.2 mm390 ± 5 µm385
6DSPBoronP10057,5 ± 2,5110 ± 0,50  90 ±   5.0 °,  20.00 ±  2.50 mm0.0 ± 0.5°5 – 7 Ohmcm150 ± 0.5 mm483 ± 5 µm40540
6DSPBoronP10057,5 ± 2,5110 ± 0,100.0 ± 0.03 °2.4 – 3.6 Ohmcm150 ± 0.2 mm400 ± 10 µm40340
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°3 – 7 Ohmcm150 ± 0.2 mm385 ± 5 µm40340
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °2.55 – 3.45 Ohmcm150 ± 0.2 mm400 ± 10 µm40340
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 10 Ohmcm150 ± 0.2 mm400 ± 10 µm
6DSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 30 Ohmcm150 ± 0.5 mm600 ± 10 µm200,730
6DSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °0.010 – 0.020 Ohmcm150 ± 0.2 mm300 ± 10 µm
6DSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 0.5°0.015 – 0.025 Ohmcm150 ± 0.2 mm800 ± 5 µm1501,5150

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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