Test grade silicon wafers-4

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
6 DSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.1 ° 1 – 20 Ohmcm 150.0 ± 0.2 mm 675 ± 5 µm 60 3
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 30 – 50 Ohmcm 150 ± 0.3 mm 300 ± 5 µm 30 1 30
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 300 ± 10 µm 50 5 50
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 1 – 20 Ohmcm 150 ± 0.5 mm 250 ± 5 µm 2 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 150 ± 0.5 mm 283.5 ± 2.5 µm 1,25
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150 ± 0.2 mm 650 ± 5 µm 1
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.010 – 0.020 Ohmcm 150 ± 0.5 mm 500 ± 10 µm 30 2 30
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.010 – 0.020 Ohmcm 150 ± 0.5 mm 500 ± 10 µm 30 2 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.50 mm 0.0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.5 mm 390 ± 5 µm 38 5
6 DSP Boron P 100 47,5 ± 2,5 110 ± 0,50 0 ± 0.5° 3 – 7 Ohmcm 150 ± 0.2 mm 385 ± 5 µm 40 5 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.5 mm 0.0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.5 mm 435 ± 5 µm 38 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.5 mm 0.0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.5 mm 435 ± 5 µm 38 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.2° 1 – 20 Ohmcm 150 ± 0.2 mm 450 ± 5 µm 20 2 50
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  37.50 ±  2.50 mm 0.0 ± 0.5 ° 0.020 – 0.025 Ohmcm 150±0.2mm 381µm -10+5µm 1,4
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  37.50 ±  2.50 mm 0.0 ± 0.5 ° 0.020 – 0.025 Ohmcm 150 ± 0.2 mm 300 ± 7.5 µm 1,4
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 150 ± 0.5 mm 390 ± 5 µm 38 5
6 DSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 10 – 50 Ohmcm 150 ± 0.5 mm 400 ± 5 µm 40 2 40
6 DSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 10 – 50 Ohmcm 150 ± 0.5 mm 455 ± 5 µm 40 2 40
6 DSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0° 10 – 50 Ohmcm 150 ± 0.5 mm 475 ± 5 µm 40 2 40
6 DSP Boron P 100 47,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 70 – 130 Ohmcm 150 ± 0.5 mm 1000 ± 10 µm 50 5 50
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.010 – 0.050 Ohmcm 150 ± 0.3 mm 400 ± 7 µm 30 1 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 29,99
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 5 – 100 Ohmcm 150 ± 0.2 mm 380 ± 5 µm 5 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.2° 1 – 10 Ohmcm 150 ± 0.2 mm 600 ± 5 µm 20 2 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 5 Ohmcm 150 ± 0.2 mm 650 ± 10 µm 49,99 1,99 49,99
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 1 – 10 Ohmcm 150 ± 0.2 mm 380 ± 5 µm 30 2 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 15 – 25 Ohmcm 150 ± 0.5 mm 400 ± 5 µm 30 4 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 150 ± 0.5 mm 390 ± 5 µm 38 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.50 mm 0.0 ± 0.5° 1 – 10 Ohmcm 150 ± 0.5 mm 390 ± 5 µm 38 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.5 mm 0.0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.5 mm 435 ± 5 µm 38 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 15 – 25 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 4 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° 6 – 8.5 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 5 60
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 5,5 30
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 30
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 0.015 – 0.025 Ohmcm 150 ± 0.2 mm 800 ± 5 µm 150 1,5 150
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 6 – 8.5 Ohmcm 150 ± 0.2 mm 380 ± 10 µm
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 5 – 8.5 Ohmcm 150 ± 0.5 mm 525 ± 5 µm 30 2 29,99
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.007 – 0.020 Ohmcm 150 ± 0.2 mm 300 ± 5 µm 1
6 DSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1° 1 – 10 Ohmcm 150 ± 0.2 mm 400 ± 20 µm
6 DSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 6 – 8.5 Ohmcm 150.0 ± 0.2 mm 380 ± 10 µm 5 40
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 0.015 – 0.025 Ohmcm 150 ± 0.2 mm 800 ± 5 µm 150 1,5 150
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.50 mm 0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.2 mm 390 ± 5 µm 38 5
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  20.00 ±  2.50 mm 0.0 ± 0.5° 5 – 7 Ohmcm 150 ± 0.5 mm 483 ± 5 µm 40 5 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.03 ° 2.4 – 3.6 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 3 – 7 Ohmcm 150 ± 0.2 mm 385 ± 5 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 2.55 – 3.45 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 40 3 40
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 150 ± 0.2 mm 400 ± 10 µm
6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 30 Ohmcm 150 ± 0.5 mm 600 ± 10 µm 20 0,7 30
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5 ° 0.010 – 0.020 Ohmcm 150 ± 0.2 mm 300 ± 10 µm
6 DSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5° 0.015 – 0.025 Ohmcm 150 ± 0.2 mm 800 ± 5 µm 150 1,5 150

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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