Test grade silicon wafers-5

Test grade silicon wafers-5

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

InchesCust classDopantTypeOrientationPFL lengthPFL directionSFLOff orientationResistivityDiameterThicknessBowTTVWarp
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.25 °1.5 ± 0.5 Ohmcm150 ± 0.5 mm280 ± 2.5 µm301,2530
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,200.0 ± 0.5°1-4 Ohmcm150 ± 0.2 mm375-425 µm40540
6DSPPhosphorusN10047,5 ± 2,5110 ± 0,500.0 ± 0.5°8 – 24 Ohmcm150 ± 0.5 mm525 ± 5 µm30130
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.00 ± 0.5°1 – 4 Ohmcm150 ± 0.2 mm400 ± 10 µm40
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,200.0 ± 0.5°1 – 3 Ohmcm150.0 ± 0.2 mm400 ± 5 µm50350
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,200.0 ± 0.2°1-4 Ohmcm150 ± 0.2 mm325-375 µm40540
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0°0.5 – 2.0 Ohmcm150 ± 0.2 mm400 ± 20 µm30230
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 25 Ohmcm150 ± 0.2 mm400 ± 10 µm50550
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0°10 – 20 Ohmcm150 ± 0.2 mm450 ± 5 µm
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0°10 – 20 Ohmcm150 ± 0.2 mm450 ± 5 µm
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°3 – 9 Ohmcm150 ± 0.2 mm300 ± 10 µm50250
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.25 °1.5 ± 0.5 Ohmcm150 ± 0.5 mm280 ± 2.5 µm301,2530
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°2 – 7 Ohmcm150 ± 0.2 mm325 ± 5 µm3
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 0.5°0.5 – 2.0 Ohmcm150 ± 0.2 mm400 ± 5 µm30230
6DSPPhosphorusN10047,5 ± 2,5110 ± 0,500.0 ± 0.5°8 – 24 Ohmcm150 ± 0.5 mm525 ± 5 µm30130
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°3 – 7 Ohmcm150 ± 0.2 mm625 ± 5 µm260
6DSPPhosphorusN10057,5 ± 2,5110 ± 1 180 ±   5.0 °,  20.00 ±  2.50 mm0.0 ± 0.5°1.4 – 6.0 Ohmcm150 ± 0.2 mm390 ± 5 µm382
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°3 – 5 Ohmcm150 ± 0.5 mm390 ± 5 µm2
6DSPPhosphorusN10057,5 ± 2,0110 ± 10.0 ± 1.0 °4 – 7 Ohmcm150 mm380 ± 1 µm
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,100.0 ± 0.1°5 – 20 Ohmcm150 ± 0.2 mm450 ± 15 µm240
6DSPPhosphorusN10047,5 ± 2,5110 ± 0,500.0 ± 0.5°8 – 24 Ohmcm150 ± 0.5 mm525 ± 5 µm30130
6DSPPhosphorusN10057,5 ± 2,0110 ± 10.0 ± 0.2°4 – 7 Ohmcm150 ± 0.2 mm600 ± 5 µm35335
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5 °1 – 10 Ohmcm150 ± 0.5 mm250 ± 4.5 µm402
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.5 – 2.0 Ohmcm150 ± 0.2 mm300 ± 5 µm50150
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.5 – 2.0 Ohmcm150 ± 0.2 mm300 ± 5 µm50150
6DSPPhosphorusN10047,5 ± 2,5110 ± 0,500.0 ± 0.5°0.5 – 1.0 Ohmcm150 ± 0.2 mm495 ± 5 µm40340
6DSPPhosphorusN11057,5 ± 2,5110 ± 10.0 ± 1°4 -10 Ohmcm150 ± 0.2 mm1300 ± 15 µm
6DSPPhosphorusN10047,5 ± 2,5110 ± 10.0 ± 1.0°1 – 5 Ohmcm150 ± 0.15 mm550 ± 4 µm30230
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 4 Ohmcm150 ± 0.2 mm250 ± 10 µm40540
6DSPPhosphorusN10057,5 ± 2,0110 ± 10.0 ± 0.2°4 – 7 Ohmcm150 ± 0.2 mm600 ± 5 µm35335
6DSPPhosphorusN10057,5 ± 2,0110 ± 10.0 ± 0.2°4 – 7 Ohmcm150 ± 0.2 mm380 ± 5 µm35135
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.675 – 1.125 Ohmcm150 ± 0.2 mm400 ± 5 µm3
6DSPPhosphorusN10057,5 ± 2,5110 ± 10 ± 0.5°15 Ohmcm ± 30%150 ± 0.5 mm675 ± 20 µm50750
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°3 – 7 Ohmcm150 ± 0.2 mm625 ± 5 µm
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 1.0 °1 – 10 Ohmcm150.0 ± 0.2 mm600 ± 5 µm160
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°3 – 7 Ohmcm150 ± 0.2 mm625 ± 5 µm260
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,200.0 ± 0.5°1-4 Ohmcm150 ± 0.2 mm375-425 µm20440
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,300.0 ± 0.5 °1 – 10 Ohmcm150 ± 0.2 mm550 ± 5 µm
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 1.0°10 – 20 Ohmcm150 ± 0.2 mm450 ± 5 µm30230
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,200.0 ± 0.2°4 – 7 Ohmcm150 ± 0.2 mm380 ± 5 µm1
6DSPPhosphorusN10047,5 ± 2,5110 ± 0,500.0 ± 0.5°8 – 24 Ohmcm150 ± 0.5 mm525 ± 5 µm30130
6DSPPhosphorusN10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 10 Ohmcm150 ± 0.2 mm400 ± 5 µm1
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 0.6°10.5 – 19.5 Ohmcm150 ± 0.2 mm675 ± 20 µm25435
6DSPPhosphorusN10057,5 ± 2,5110 ± 10.0 ± 0.5°0.5 – 2.0 Ohmcm150 ± 0.5 mm400 ± 10 µm
6DSPRed Phos.N+10057,5 ± 2,5011 ± 10.0 ± 0.5 °0.01 – 0.02 Ohmcm150.0 ± 0.2 mm380 ± 10 µm60260
6DSPRed Phos.N+10057,5 ± 2,5110 ± 0,500.0 ± 0.2°0.01 – 0.02 Ohmcm150 ± 0.2 mm300 ± 5 µm20250
6DSPRed Phos.N+10047,5 ± 2,5110 ± 0,200.0 ± 0.2°< 0.0019 Ohmcm150 ± 0.5 mm400 ± 5 µm40140
6DSPRed Phos.N+10047,5 ± 2,5110 ± 0,500.0 ± 0.5 °< 0.002 Ohmcm150 ± 0.5 mm625 ± 5 µm
6DSPRed Phos.N+10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.010 – 0.020 Ohmcm150 ± 0.2 mm400 ± 5 µm601060
6DSPRed Phos.N+10047,5 ± 2,5110 ± 0,200.0 ± 0.2°< 0.0019 Ohmcm150 ± 0.5 mm400 ± 5 µm
6SSPAntimonyN+10047,5 ± 2,5110 ± 20.0 ± 0.5 °0.007 – 0.020 Ohmcm150 ± 0.5mm625 ± 25 µm

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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