Test grade silicon wafers-7

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

InchesCust classDopantTypeOrientationPFL lengthPFL directionSFLOff orientationResistivityDiameterThicknessBowTTVWarp
6SSPArsenicN+10057,5 ± 2,5110 ± 10.0 ± 1.0 °0.0028-0.0035 Ohmcm150 ± 0.5 mm440 ± 20 µm40540
6SSPArsenicN+11157,5 ± 2,5110 ± 14.0 ± 0.5 °< 0.0035 Ohmcm150 ± 0.7 mm440 ± 20 µm901790
6SSPArsenicN+10057,5 ± 2,5110 ± 10.0 ± 1.0 °0.003 – 0.005 Ohmcm150 ± 0.2 mm625 ± 15 µm1560
6SSPArsenicN+10047,5 ± 2,5110 ± 10.0 ± 0.5°0.002-0.003 Ohmcm150.0 ± 0.5 mm610-640 µm
6SSPArsenicN+10047,5 ± 1,0110 ± 0,500.0 ± 0.5°0.002 – 0.004 Ohmcm150.0 ± 0.2 mm625 ± 15 µm
6SSPArsenicN+10047,5 ± 2,5001 ± 10.0 ± 1.0 °< 0.0035 Ohmcm150.0 ± 0.2 mm625 ± 25 µm
6SSPArsenicN+10047,5 ± 1,0110 ± 0,500.0 ± 0.5°0.003 – 0.004 Ohmcm150.0 ± 0.2 mm625 ± 15 µm
6SSPArsenicN+10057,5 ± 1,0100 ± 1-1 – 1°0.001-0.005 Ohmcm149.8 – 150.2 mm555 – 595 µm55440
6SSPArsenicN+10057,5 ± 2,5110 ± 10.0 ± 1.0 °0.0028-0.0035 Ohmcm150 ± 0.5 mm440 ± 20 µm405
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0°0.005 – 0.025 Ohmcm150 ± 0.2 mm400 ± 10µm5
6SSPBoronP10057,5 ± 2,5110 ± 1  90 ±   5.0 °,  37.50 ±  2.50 mm0.0° ± 1.0°5 – 10 Ohmcm150 ± 0.5 mm625 ± 25 µm50850
6SSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 5 Ohmcm150 ± 0.2 mm550 ± 10 µm601060
6SSPBoronP11157,5 ± 2,5110 ± 12.5 ± 0.5 °10 – 30 Ohmcm150 ± 0.2 mm675 ± 20 µm601060
6SSPBoronP+10057,5 ± 2,5100 ± 10.0 ± 0.5 °0.01 – 0.02 Ohmcm150 ± 0.2 mm675 ± 15 µm
6SSPBoronP11157,5 ± 2,5110 ± 10 ± 0.2 °1 – 20 Ohmcm150 ± 0.2 mm675 ± 25 µm40540
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0°0.008 – 0.02 Ohmcm150 ± 0.2 mm675 ± 20 µm501050
6SSPBoronP+11147,5 ± 2,5110 ± 21.5 ± 0.5 °0.009 – 0.015 Ohmcm150.0± 0.5 mm625 ± 25 µm1555
6SSPBoronP+10057,5 ± 1,0100 ± 10.0 ± 1.0 °0.001 – 0.004 Ohmcm150.0±0.2 mm675 ± 15 µm1060
6SSPBoronP10057,5 ± 2,5110 ± 10.0 ± 1 °3 – 15 Ohmcm150.0 ± 0.2 mm675 ± 10 µm40630
6SSPBoronP11157,5 ± 2,5110 ± 14.0 ± 0.5 °5 – 10 Ohmcm150 ± 0.5 mm380 ± 15 µm401040
6SSPBoronP+11147,5 ± 2,5110 ± 21.5 ± 0.5 °0,014 – 0,018 Ohmcm150 ± 0.5 mm625 ± 25 µm1555
6SSPBoronP11157,5 ± 2,5110 ± 14.0 ± 0.5 °5 – 10 Ohmcm150 ± 0.5 mm380 ± 15 µm401040
6SSPBoronP10047,5 ± 2,501T ± 0,50{0TT} 4.0 ± 0.5 °3.5 – 7.0 Ohmcm150 ± 0.2 mm625 ± 15 µm30530
6SSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.15-0.21 Ohmcm150 ± 0.5 mm610-640 µm601060
6SSPBoronP10057,5 ± 2,5110 ± 10.0 ± 0.25°12 – 16 Ohmcm150 ± 0.2 mm675 ± 20 µm35435
6SSPBoronP10057,5 ± 2,0110 ± 0,500.0 ± 0.2°2 – 3.5 Ohmcm150.0 ± 0.5mm625 ± 20 µm40540
6SSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.010 – 0.022 Ohmcm150 ± 0.2 mm675 ± 20 µm40540
6SSPBoronP10057,5 ± 2,5110 ± 10.0 ± 1 °3 – 15 Ohmcm150.0 ± 0.2 mm675 ± 10 µm40630
6SSPBoronP11157,5 ± 2,5110 ± 14.0 ± 0.5 °7.0 – 21.6 Ohmcm150.0 ± 0.2 mm675 ± 20 µm601560
6SSPBoronP10057,5 ± 2,5110 ± 10.0 ± 1.0°45 – 62 Ohmcm150 ± 0.2 mm508 ± 25 µm1040
6SSPBoronP10057,5 ± 2,5110 ± 0,500.0 ± 0.5°1 – 5 Ohmcm150.0 ± 0.2 mm675 ± 10 µm
6SSPBoronP+10057,5 ± 1,0100 ± 10.0 ± 1.0 °0.001 – 0.004 Ohmcm150.0±0.2 mm675 ± 15 µm1060
6SSPBoronP+10047,5 ± 2,0011 ± 12.0 ± 1.0°0.005 – 0.020 Ohmcm150 ± 0.2 mm625 ± 15 µm
6SSPBoronP10047,5 ± 2,5110 ± 10.0 ± 1.0 °1 – 100 Ohmcm150.0 ± 0.5 mm1000 ± 25 µm10
6SSPBoronP+10047,5 ± 1,5110 ± 10.0 ± 1.0 °< 20 mOhmcm150 ± 0.15 mm625 ± 15 µm2010
6SSPBoronP11157,5 ± 2,5110 ± 10 ± 0.3 °10 – 50 Ohmcm150 ± 0.2 mm1000 ± 25 µm640
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 0.5 °> 0.01 Ohmcm150 ± 0.2 mm1300 ± 25 µm
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0°0.005 – 0.025 Ohmcm150 ± 0.2 mm400 ± 10 µm5
6SSPBoronP11157,5 ± 2,5110 ± 12.5 ± 0.5°10 – 30 Ohmcm150 ± 0.5 mm675 ± 20 µm601060
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1 °0.008 – 0.020 Ohmcm150 ± 0.2 mm675 ± 25 µm4510
6SSPBoronP11157,5 ± 2,5110 ± 14.0 ± 0.5 °12 – 18 Ohmcm150 ± 0.2 mm675 ± 20 µm401040
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0°0.01 – 0.025 Ohmcm150 ± 0.5 mm675 ± 20 µm501050
6SSPBoronP+10057,5 ± 2,5110 ± 0,500.0 ± 0.5°0.010 – 0.020 Ohmcm150 ± 0.3 mm675 ± 20 µm30530
6SSPBoronP+10047,5 ± 1,5110 ± 10.0 ± 1.0 °< 20 mOhmcm150 ± 0.15 mm625 ± 15 µm2010
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0 °0.005 – 0.025 Ohmcm150 ± 0.2 mm500 ± 10 µm5
6SSPBoronP+10047,5 ± 1,5110 ± 10.0 ± 1.0 °< 20 mOhmcm150 ± 0.15 mm625 ± 15 µm2010
6SSPBoronP1000,0 ± 0,0110 ± 0,200.0 ± 0.5 °1 – 10 Ohmcm150 ± 0.2 mm675 ± 25 µm6
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1.0°0.008 – 0.02 Ohmcm150 ± 0.2 mm675 ± 20 µm501050
6SSPBoronP11157,5 ± 2,5110 ± 10.0 ± 0.3 °10 – 50 Ohmcm150 ± 0.5 mm1000 ± 25 µm2550
6SSPBoronP10057,5 ± 2,5110 ± 1  90 ±   5.0 °,  20.00 ±  2.50 mm0.0 ± 0.5°5 – 9 Ohmcm150 ± 0.5 mm635 ± 25 µm383050
6SSPBoronP+10057,5 ± 2,5110 ± 10.0 ± 1 °<0.005 Ohmcm150.0 ± 0.2 mm675 ± 10 µm40630

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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