PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches | Cust class | Dopant | Type | Orientation | PFL length | PFL direction | SFL | Off orientation | Resistivity | Diameter | Thickness | Bow | TTV | Warp |
6 | SSP | Arsenic | N+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 0.0028-0.0035 Ohmcm | 150 ± 0.5 mm | 440 ± 20 µm | 40 | 5 | 40 | |
6 | SSP | Arsenic | N+ | 111 | 57,5 ± 2,5 | 110 ± 1 | 4.0 ± 0.5 ° | < 0.0035 Ohmcm | 150 ± 0.7 mm | 440 ± 20 µm | 90 | 17 | 90 | |
6 | SSP | Arsenic | N+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 0.003 – 0.005 Ohmcm | 150 ± 0.2 mm | 625 ± 15 µm | 15 | 60 | ||
6 | SSP | Arsenic | N+ | 100 | 47,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 0.002-0.003 Ohmcm | 150.0 ± 0.5 mm | 610-640 µm | ||||
6 | SSP | Arsenic | N+ | 100 | 47,5 ± 1,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.002 – 0.004 Ohmcm | 150.0 ± 0.2 mm | 625 ± 15 µm | ||||
6 | SSP | Arsenic | N+ | 100 | 47,5 ± 2,5 | 001 ± 1 | 0.0 ± 1.0 ° | < 0.0035 Ohmcm | 150.0 ± 0.2 mm | 625 ± 25 µm | ||||
6 | SSP | Arsenic | N+ | 100 | 47,5 ± 1,0 | 110 ± 0,50 | 0.0 ± 0.5° | 0.003 – 0.004 Ohmcm | 150.0 ± 0.2 mm | 625 ± 15 µm | ||||
6 | SSP | Arsenic | N+ | 100 | 57,5 ± 1,0 | 100 ± 1 | -1 – 1° | 0.001-0.005 Ohmcm | 149.8 – 150.2 mm | 555 – 595 µm | 55 | 4 | 40 | |
6 | SSP | Arsenic | N+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 0.0028-0.0035 Ohmcm | 150 ± 0.5 mm | 440 ± 20 µm | 40 | 5 | ||
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 0.005 – 0.025 Ohmcm | 150 ± 0.2 mm | 400 ± 10µm | 5 | |||
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 90 ± 5.0 °, 37.50 ± 2.50 mm | 0.0° ± 1.0° | 5 – 10 Ohmcm | 150 ± 0.5 mm | 625 ± 25 µm | 50 | 8 | 50 |
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 5 Ohmcm | 150 ± 0.2 mm | 550 ± 10 µm | 60 | 10 | 60 | |
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 2.5 ± 0.5 ° | 10 – 30 Ohmcm | 150 ± 0.2 mm | 675 ± 20 µm | 60 | 10 | 60 | |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 100 ± 1 | 0.0 ± 0.5 ° | 0.01 – 0.02 Ohmcm | 150 ± 0.2 mm | 675 ± 15 µm | ||||
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 0 ± 0.2 ° | 1 – 20 Ohmcm | 150 ± 0.2 mm | 675 ± 25 µm | 40 | 5 | 40 | |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 0.008 – 0.02 Ohmcm | 150 ± 0.2 mm | 675 ± 20 µm | 50 | 10 | 50 | |
6 | SSP | Boron | P+ | 111 | 47,5 ± 2,5 | 110 ± 2 | 1.5 ± 0.5 ° | 0.009 – 0.015 Ohmcm | 150.0± 0.5 mm | 625 ± 25 µm | 15 | 55 | ||
6 | SSP | Boron | P+ | 100 | 57,5 ± 1,0 | 100 ± 1 | 0.0 ± 1.0 ° | 0.001 – 0.004 Ohmcm | 150.0±0.2 mm | 675 ± 15 µm | 10 | 60 | ||
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1 ° | 3 – 15 Ohmcm | 150.0 ± 0.2 mm | 675 ± 10 µm | 40 | 6 | 30 | |
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 4.0 ± 0.5 ° | 5 – 10 Ohmcm | 150 ± 0.5 mm | 380 ± 15 µm | 40 | 10 | 40 | |
6 | SSP | Boron | P+ | 111 | 47,5 ± 2,5 | 110 ± 2 | 1.5 ± 0.5 ° | 0,014 – 0,018 Ohmcm | 150 ± 0.5 mm | 625 ± 25 µm | 15 | 55 | ||
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 4.0 ± 0.5 ° | 5 – 10 Ohmcm | 150 ± 0.5 mm | 380 ± 15 µm | 40 | 10 | 40 | |
6 | SSP | Boron | P | 100 | 47,5 ± 2,5 | 01T ± 0,50 | {0TT} 4.0 ± 0.5 ° | 3.5 – 7.0 Ohmcm | 150 ± 0.2 mm | 625 ± 15 µm | 30 | 5 | 30 | |
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.15-0.21 Ohmcm | 150 ± 0.5 mm | 610-640 µm | 60 | 10 | 60 | |
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.25° | 12 – 16 Ohmcm | 150 ± 0.2 mm | 675 ± 20 µm | 35 | 4 | 35 | |
6 | SSP | Boron | P | 100 | 57,5 ± 2,0 | 110 ± 0,50 | 0.0 ± 0.2° | 2 – 3.5 Ohmcm | 150.0 ± 0.5mm | 625 ± 20 µm | 40 | 5 | 40 | |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.010 – 0.022 Ohmcm | 150 ± 0.2 mm | 675 ± 20 µm | 40 | 5 | 40 | |
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1 ° | 3 – 15 Ohmcm | 150.0 ± 0.2 mm | 675 ± 10 µm | 40 | 6 | 30 | |
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 4.0 ± 0.5 ° | 7.0 – 21.6 Ohmcm | 150.0 ± 0.2 mm | 675 ± 20 µm | 60 | 15 | 60 | |
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 45 – 62 Ohmcm | 150 ± 0.2 mm | 508 ± 25 µm | 10 | 40 | ||
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 5 Ohmcm | 150.0 ± 0.2 mm | 675 ± 10 µm | ||||
6 | SSP | Boron | P+ | 100 | 57,5 ± 1,0 | 100 ± 1 | 0.0 ± 1.0 ° | 0.001 – 0.004 Ohmcm | 150.0±0.2 mm | 675 ± 15 µm | 10 | 60 | ||
6 | SSP | Boron | P+ | 100 | 47,5 ± 2,0 | 011 ± 1 | 2.0 ± 1.0° | 0.005 – 0.020 Ohmcm | 150 ± 0.2 mm | 625 ± 15 µm | ||||
6 | SSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 100 Ohmcm | 150.0 ± 0.5 mm | 1000 ± 25 µm | 10 | |||
6 | SSP | Boron | P+ | 100 | 47,5 ± 1,5 | 110 ± 1 | 0.0 ± 1.0 ° | < 20 mOhmcm | 150 ± 0.15 mm | 625 ± 15 µm | 20 | 10 | ||
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 0 ± 0.3 ° | 10 – 50 Ohmcm | 150 ± 0.2 mm | 1000 ± 25 µm | 6 | 40 | ||
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5 ° | > 0.01 Ohmcm | 150 ± 0.2 mm | 1300 ± 25 µm | ||||
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 0.005 – 0.025 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 5 | |||
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 2.5 ± 0.5° | 10 – 30 Ohmcm | 150 ± 0.5 mm | 675 ± 20 µm | 60 | 10 | 60 | |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1 ° | 0.008 – 0.020 Ohmcm | 150 ± 0.2 mm | 675 ± 25 µm | 45 | 10 | ||
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 4.0 ± 0.5 ° | 12 – 18 Ohmcm | 150 ± 0.2 mm | 675 ± 20 µm | 40 | 10 | 40 | |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 0.01 – 0.025 Ohmcm | 150 ± 0.5 mm | 675 ± 20 µm | 50 | 10 | 50 | |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.010 – 0.020 Ohmcm | 150 ± 0.3 mm | 675 ± 20 µm | 30 | 5 | 30 | |
6 | SSP | Boron | P+ | 100 | 47,5 ± 1,5 | 110 ± 1 | 0.0 ± 1.0 ° | < 20 mOhmcm | 150 ± 0.15 mm | 625 ± 15 µm | 20 | 10 | ||
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 0.005 – 0.025 Ohmcm | 150 ± 0.2 mm | 500 ± 10 µm | 5 | |||
6 | SSP | Boron | P+ | 100 | 47,5 ± 1,5 | 110 ± 1 | 0.0 ± 1.0 ° | < 20 mOhmcm | 150 ± 0.15 mm | 625 ± 15 µm | 20 | 10 | ||
6 | SSP | Boron | P | 100 | 0,0 ± 0,0 | 110 ± 0,20 | 0.0 ± 0.5 ° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 675 ± 25 µm | 6 | |||
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 0.008 – 0.02 Ohmcm | 150 ± 0.2 mm | 675 ± 20 µm | 50 | 10 | 50 | |
6 | SSP | Boron | P | 111 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.3 ° | 10 – 50 Ohmcm | 150 ± 0.5 mm | 1000 ± 25 µm | 25 | 50 | ||
6 | SSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 90 ± 5.0 °, 20.00 ± 2.50 mm | 0.0 ± 0.5° | 5 – 9 Ohmcm | 150 ± 0.5 mm | 635 ± 25 µm | 38 | 30 | 50 |
6 | SSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1 ° | <0.005 Ohmcm | 150.0 ± 0.2 mm | 675 ± 10 µm | 40 | 6 | 30 |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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