Test grade silicon wafers-7

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.0028-0.0035 Ohmcm 150 ± 0.5 mm 440 ± 20 µm 40 5 40
6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° < 0.0035 Ohmcm 150 ± 0.7 mm 440 ± 20 µm 90 17 90
6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.003 – 0.005 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 15 60
6 SSP Arsenic N+ 100 47,5 ± 2,5 110 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 150.0 ± 0.5 mm 610-640 µm
6 SSP Arsenic N+ 100 47,5 ± 1,0 110 ± 0,50 0.0 ± 0.5° 0.002 – 0.004 Ohmcm 150.0 ± 0.2 mm 625 ± 15 µm
6 SSP Arsenic N+ 100 47,5 ± 2,5 001 ± 1 0.0 ± 1.0 ° < 0.0035 Ohmcm 150.0 ± 0.2 mm 625 ± 25 µm
6 SSP Arsenic N+ 100 47,5 ± 1,0 110 ± 0,50 0.0 ± 0.5° 0.003 – 0.004 Ohmcm 150.0 ± 0.2 mm 625 ± 15 µm
6 SSP Arsenic N+ 100 57,5 ± 1,0 100 ± 1 -1 – 1° 0.001-0.005 Ohmcm 149.8 – 150.2 mm 555 – 595 µm 55 4 40
6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.0028-0.0035 Ohmcm 150 ± 0.5 mm 440 ± 20 µm 40 5
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.005 – 0.025 Ohmcm 150 ± 0.2 mm 400 ± 10µm 5
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  37.50 ±  2.50 mm 0.0° ± 1.0° 5 – 10 Ohmcm 150 ± 0.5 mm 625 ± 25 µm 50 8 50
6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 5 Ohmcm 150 ± 0.2 mm 550 ± 10 µm 60 10 60
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 2.5 ± 0.5 ° 10 – 30 Ohmcm 150 ± 0.2 mm 675 ± 20 µm 60 10 60
6 SSP Boron P+ 100 57,5 ± 2,5 100 ± 1 0.0 ± 0.5 ° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 675 ± 15 µm
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 0 ± 0.2 ° 1 – 20 Ohmcm 150 ± 0.2 mm 675 ± 25 µm 40 5 40
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.008 – 0.02 Ohmcm 150 ± 0.2 mm 675 ± 20 µm 50 10 50
6 SSP Boron P+ 111 47,5 ± 2,5 110 ± 2 1.5 ± 0.5 ° 0.009 – 0.015 Ohmcm 150.0± 0.5 mm 625 ± 25 µm 15 55
6 SSP Boron P+ 100 57,5 ± 1,0 100 ± 1 0.0 ± 1.0 ° 0.001 – 0.004 Ohmcm 150.0±0.2 mm 675 ± 15 µm 10 60
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1 ° 3 – 15 Ohmcm 150.0 ± 0.2 mm 675 ± 10 µm 40 6 30
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° 5 – 10 Ohmcm 150 ± 0.5 mm 380 ± 15 µm 40 10 40
6 SSP Boron P+ 111 47,5 ± 2,5 110 ± 2 1.5 ± 0.5 ° 0,014 – 0,018 Ohmcm 150 ± 0.5 mm 625 ± 25 µm 15 55
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° 5 – 10 Ohmcm 150 ± 0.5 mm 380 ± 15 µm 40 10 40
6 SSP Boron P 100 47,5 ± 2,5 01T ± 0,50 {0TT} 4.0 ± 0.5 ° 3.5 – 7.0 Ohmcm 150 ± 0.2 mm 625 ± 15 µm 30 5 30
6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.15-0.21 Ohmcm 150 ± 0.5 mm 610-640 µm 60 10 60
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.25° 12 – 16 Ohmcm 150 ± 0.2 mm 675 ± 20 µm 35 4 35
6 SSP Boron P 100 57,5 ± 2,0 110 ± 0,50 0.0 ± 0.2° 2 – 3.5 Ohmcm 150.0 ± 0.5mm 625 ± 20 µm 40 5 40
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.010 – 0.022 Ohmcm 150 ± 0.2 mm 675 ± 20 µm 40 5 40
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1 ° 3 – 15 Ohmcm 150.0 ± 0.2 mm 675 ± 10 µm 40 6 30
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° 7.0 – 21.6 Ohmcm 150.0 ± 0.2 mm 675 ± 20 µm 60 15 60
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 45 – 62 Ohmcm 150 ± 0.2 mm 508 ± 25 µm 10 40
6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 1 – 5 Ohmcm 150.0 ± 0.2 mm 675 ± 10 µm
6 SSP Boron P+ 100 57,5 ± 1,0 100 ± 1 0.0 ± 1.0 ° 0.001 – 0.004 Ohmcm 150.0±0.2 mm 675 ± 15 µm 10 60
6 SSP Boron P+ 100 47,5 ± 2,0 011 ± 1 2.0 ± 1.0° 0.005 – 0.020 Ohmcm 150 ± 0.2 mm 625 ± 15 µm
6 SSP Boron P 100 47,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 1 – 100 Ohmcm 150.0 ± 0.5 mm 1000 ± 25 µm 10
6 SSP Boron P+ 100 47,5 ± 1,5 110 ± 1 0.0 ± 1.0 ° < 20 mOhmcm 150 ± 0.15 mm 625 ± 15 µm 20 10
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 0 ± 0.3 ° 10 – 50 Ohmcm 150 ± 0.2 mm 1000 ± 25 µm 6 40
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 0.5 ° > 0.01 Ohmcm 150 ± 0.2 mm 1300 ± 25 µm
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.005 – 0.025 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 5
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 2.5 ± 0.5° 10 – 30 Ohmcm 150 ± 0.5 mm 675 ± 20 µm 60 10 60
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1 ° 0.008 – 0.020 Ohmcm 150 ± 0.2 mm 675 ± 25 µm 45 10
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° 12 – 18 Ohmcm 150 ± 0.2 mm 675 ± 20 µm 40 10 40
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.01 – 0.025 Ohmcm 150 ± 0.5 mm 675 ± 20 µm 50 10 50
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.010 – 0.020 Ohmcm 150 ± 0.3 mm 675 ± 20 µm 30 5 30
6 SSP Boron P+ 100 47,5 ± 1,5 110 ± 1 0.0 ± 1.0 ° < 20 mOhmcm 150 ± 0.15 mm 625 ± 15 µm 20 10
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.005 – 0.025 Ohmcm 150 ± 0.2 mm 500 ± 10 µm 5
6 SSP Boron P+ 100 47,5 ± 1,5 110 ± 1 0.0 ± 1.0 ° < 20 mOhmcm 150 ± 0.15 mm 625 ± 15 µm 20 10
6 SSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.5 ° 1 – 10 Ohmcm 150 ± 0.2 mm 675 ± 25 µm 6
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.008 – 0.02 Ohmcm 150 ± 0.2 mm 675 ± 20 µm 50 10 50
6 SSP Boron P 111 57,5 ± 2,5 110 ± 1 0.0 ± 0.3 ° 10 – 50 Ohmcm 150 ± 0.5 mm 1000 ± 25 µm 25 50
6 SSP Boron P 100 57,5 ± 2,5 110 ± 1   90 ±   5.0 °,  20.00 ±  2.50 mm 0.0 ± 0.5° 5 – 9 Ohmcm 150 ± 0.5 mm 635 ± 25 µm 38 30 50
6 SSP Boron P+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1 ° <0.005 Ohmcm 150.0 ± 0.2 mm 675 ± 10 µm 40 6 30

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

Share this post