Test grade silicon wafers-9

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 400 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 400 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 350 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 350 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 525 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 450 ± 15 µm 40 5 40
6 SSP Red Phos. N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° <1.5 mOhmcm 150.0 ± 0.2mm 675 ± 10 µm 60 10 60
8 DSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1° 0.008 – 0.03 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 10 60
8 DSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1° 0.008 – 0.03 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 10 60
8 DSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2 ° 0.001 – 0.005 Ohmcm 200 ± 0.2 mm 712.5 ± 12.5 µm 60 8 75
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 8 – 12 Ohmcm 200 ± 0.2 mm 930 ± 10 µm 5 60
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.1 Ohmcm 200 ± 0.2 mm 600 ± 5 µm 1
8 DSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 0.1 – 1 Ohmcm 200 ± 0.2 mm 1500 ± 25 µm 65 10 75
8 DSP Boron P 100 0,0 ± 0,0 011 ± 0,50 0.0 ± 0.5° 9 – 18 Ohmcm 200 ± 0.5 mm 400 ± 5 µm 40 1 40
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.2° 6 – 36 Ohmcm 200 ± 0.2 mm 1000 ± 15 µm 40 5 40
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.2 mm 650 ± 5 µm 60 1 60
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.001 – 0.005 Ohmcm 200 ± 0.5 mm 500 ± 5 µm 0,7
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 5 Ohmcm 200.0 ± 0.2mm 770 ± 5 µm 60 3 60
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 200 ± 0.2 mm 1000 ± 10 µm
8 DSP Boron P 100 0,0 ± 0,0 SSS ± 1 0.0 ± 0.5 ° 10 – 15 Ohmcm 200 ± 0.2 mm 350 ± 5 µm 60 3 60
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 1 – 10 Ohmcm 200 ± 0.2 mm 725 ± 5 µm 40 7 50
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 200 ± 0.2 mm 500 ± 5 µm 60 3 60
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 200 ± 0.5 mm 500 ± 5 µm 0,7
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 200 ± 0.5 mm 600 ± 5 µm 0,7
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 11 – 20 Ohmcm 200 ± 0.2 mm 500 ± 15 µm
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.2° 0.01 – 0.02 Ohmcm 200 ± 0.2 mm 625 ± 5 µm 60 2 60
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5 ° 10 ± 3 Ohmcm 200 ± 0.2 mm 725 ± 5 µm 1 50
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.2° 0.01 – 0.02 Ohmcm 200 ± 0.2 mm 850 ± 5 µm 60 2 60
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 1.0° 0.01 – 0.02 Ohmcm 200 ± 0.5 mm 1000 ± 25 µm
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.13 – 0.15 Ohmcm 200 ± 0.5 mm 725  ± 10 µm 20 4
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 1 – 30 Ohmcm 200 ± 0.2 mm 720 ± 5 µm
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1° 1 – 2 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 10 60
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1° 10 – 100 Ohmcm 200 ± 0.2 mm 550 ± 25 µm 35 10 35
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 200 ± 0.2 mm 710 ± 5 µm
8 DSP Boron P 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0° 10 – 200 Ohmcm 200 ± 0.2 mm 1500 ± 25 µm 4 60
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.2 mm 650 ± 5 µm 60 1 60
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.2° 1 – 10 Ohmcm 200 ± 0.2 mm 400 ± 5 µm 20 1 35
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.2° 1 – 10 Ohmcm 200 ± 0.2 mm 650 ± 5 µm 20 1 35
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.2° 6 – 36 Ohmcm 200 ± 0.2 mm 1000 ± 15 µm 40 5 40
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 5 – 40 Ohmcm 200 ± 0.5 mm 500 ± 5 µm
8 DSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 1 – 30 Ohmcm 200 ± 0.2 mm 720 ± 5 µm
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.20° 1 – 10 Ohmcm 200 ± 0.2 mm 1000 ± 25 µm 4 35
8 DSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 1 – 10 Ohmcm 200 ± 0.2 mm 725 ± 5 µm 40 7 50
8 DSP Boron P+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.010 – 0.020 Ohmcm 200 ± 0.2 mm 300 ± 5 µm 60 3 60
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 5 – 40 Ohmcm 200 ± 0.2 mm 440 ± 5 µm 10 40
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 10 Ohmcm 200 ± 0.2 mm 725 ± 5 µm 50 5 50
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.2 mm 600 ± 10 µm 2 50
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 2  – 20 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 3 30
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1° 1 – 2 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 10 60
8 DSP Phosphorus N 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0 ° 5 – 40 Ohmcm 200 ± 0.2 mm 440 ± 5 µm 60 5 60
8 DSP Phosphorus N 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0 ° 5 – 40 Ohmcm 200 ± 0.2 mm 440 ± 5 µm 60 5 60

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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