Test grade silicon wafers-9

Test grade silicon wafers-9

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

InchesCust classDopantTypeOrientationPFL lengthPFL directionSFLOff orientationResistivityDiameterThicknessBowTTVWarp
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm400 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm400 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm350 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm350 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,5110 ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm525 ± 15 µm40540
6SSPRed Phos.N+10047,5 ± 2,501T ± 0,500.0 ± 0.5°0.015 – 0.035 Ohmcm150 ± 0.5 mm450 ± 15 µm40540
6SSPRed Phos.N+10057,5 ± 2,5110 ± 10.0 ± 1.0 °<1.5 mOhmcm150.0 ± 0.2mm675 ± 10 µm601060
8DSPAntimonyN+1000,0 ± 0,0110 ± 10.0 ± 1°0.008 – 0.03 Ohmcm200 ± 0.2 mm725 ± 20 µm1060
8DSPAntimonyN+1000,0 ± 0,0110 ± 10.0 ± 1°0.008 – 0.03 Ohmcm200 ± 0.2 mm725 ± 20 µm1060
8DSPArsenicN+1000,0 ± 0,0110 ± 10.0 ± 0.2 °0.001 – 0.005 Ohmcm200 ± 0.2 mm712.5 ± 12.5 µm60875
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 1.0°8 – 12 Ohmcm200 ± 0.2 mm930 ± 10 µm560
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.01 – 0.1 Ohmcm200 ± 0.2 mm600 ± 5 µm1
8DSPBoronP1110,0 ± 0,0110 ± 10.0 ± 0.2°0.1 – 1 Ohmcm200 ± 0.2 mm1500 ± 25 µm651075
8DSPBoronP1000,0 ± 0,0011 ± 0,500.0 ± 0.5°9 – 18 Ohmcm200 ± 0.5 mm400 ± 5 µm40140
8DSPBoronP1000,0 ± 0,0110 ± 0,500.0 ± 0.2°6 – 36 Ohmcm200 ± 0.2 mm1000 ± 15 µm40540
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 0.5°1 – 10 Ohmcm200 ± 0.2 mm650 ± 5 µm60160
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.001 – 0.005 Ohmcm200 ± 0.5 mm500 ± 5 µm0,7
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 1.0°1 – 5 Ohmcm200.0 ± 0.2mm770 ± 5 µm60360
8DSPBoronP+1000,0 ± 0,0110 ± 10.0 ± 0.5°0.01 – 0.02 Ohmcm200 ± 0.2 mm1000 ± 10 µm
8DSPBoronP1000,0 ± 0,0SSS ± 10.0 ± 0.5 °10 – 15 Ohmcm200 ± 0.2 mm350 ± 5 µm60360
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 0.2°1 – 10 Ohmcm200 ± 0.2 mm725 ± 5 µm40750
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.01 – 0.02 Ohmcm200 ± 0.2 mm500 ± 5 µm60360
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.01 – 0.02 Ohmcm200 ± 0.5 mm500 ± 5 µm0,7
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.01 – 0.02 Ohmcm200 ± 0.5 mm600 ± 5 µm0,7
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 0.5°11 – 20 Ohmcm200 ± 0.2 mm500 ± 15 µm
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.2°0.01 – 0.02 Ohmcm200 ± 0.2 mm625 ± 5 µm60260
8DSPBoronP1000,0 ± 0,0110 ± 0,500.0 ± 0.5 °10 ± 3 Ohmcm200 ± 0.2 mm725 ± 5 µm150
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.2°0.01 – 0.02 Ohmcm200 ± 0.2 mm850 ± 5 µm60260
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 1.0°0.01 – 0.02 Ohmcm200 ± 0.5 mm1000 ± 25 µm
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.13 – 0.15 Ohmcm200 ± 0.5 mm725  ± 10 µm204
8DSPBoronP1000,0 ± 0,0110 ± 0,500.0 ± 0.5°1 – 30 Ohmcm200 ± 0.2 mm720 ± 5 µm
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 1°1 – 2 Ohmcm200 ± 0.2 mm725 ± 20 µm1060
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 1°10 – 100 Ohmcm200 ± 0.2 mm550 ± 25 µm351035
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.005 – 0.020 Ohmcm200 ± 0.2 mm710 ± 5 µm
8DSPBoronP1000,0 ± 0,0011 ± 10.0 ± 1.0°10 – 200 Ohmcm200 ± 0.2 mm1500 ± 25 µm460
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 0.5°1 – 10 Ohmcm200 ± 0.2 mm650 ± 5 µm60160
8DSPBoronP1000,0 ± 0,0110 ± 0,200.0 ± 0.2°1 – 10 Ohmcm200 ± 0.2 mm400 ± 5 µm20135
8DSPBoronP1000,0 ± 0,0110 ± 0,200.0 ± 0.2°1 – 10 Ohmcm200 ± 0.2 mm650 ± 5 µm20135
8DSPBoronP1000,0 ± 0,0110 ± 0,500.0 ± 0.2°6 – 36 Ohmcm200 ± 0.2 mm1000 ± 15 µm40540
8DSPBoronP1000,0 ± 0,0110 ± 0,500.0 ± 0.5°5 – 40 Ohmcm200 ± 0.5 mm500 ± 5 µm
8DSPBoronP1000,0 ± 0,0110 ± 0,500.0 ± 0.5°1 – 30 Ohmcm200 ± 0.2 mm720 ± 5 µm
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 0.20°1 – 10 Ohmcm200 ± 0.2 mm1000 ± 25 µm435
8DSPBoronP1000,0 ± 0,0110 ± 10.0 ± 0.2°1 – 10 Ohmcm200 ± 0.2 mm725 ± 5 µm40750
8DSPBoronP+1000,0 ± 0,0110 ± 0,500.0 ± 0.5°0.010 – 0.020 Ohmcm200 ± 0.2 mm300 ± 5 µm60360
8DSPPhosphorusN1000,0 ± 0,0110 ± 10.0 ± 1.0 °5 – 40 Ohmcm200 ± 0.2 mm440 ± 5 µm1040
8DSPPhosphorusN1000,0 ± 0,0110 ± 10.0 ± 1.0°1 – 10 Ohmcm200 ± 0.2 mm725 ± 5 µm50550
8DSPPhosphorusN1000,0 ± 0,0110 ± 10.0 ± 0.5°1 – 10 Ohmcm200 ± 0.2 mm600 ± 10 µm250
8DSPPhosphorusN1000,0 ± 0,0110 ± 10.0 ± 1.0°2  – 20 Ohmcm200 ± 0.2 mm725 ± 15 µm40330
8DSPPhosphorusN1000,0 ± 0,0110 ± 10.0 ± 1°1 – 2 Ohmcm200 ± 0.2 mm725 ± 20 µm1060
8DSPPhosphorusN1000,0 ± 0,0011 ± 10.0 ± 1.0 °5 – 40 Ohmcm200 ± 0.2 mm440 ± 5 µm60560
8DSPPhosphorusN1000,0 ± 0,0011 ± 10.0 ± 1.0 °5 – 40 Ohmcm200 ± 0.2 mm440 ± 5 µm60560

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

Share this post