Test Wafer Monitor Wafer Dummy Wafer

Test Wafer Monitor Wafer Dummy Wafer

PAM-XIAMEN Offers  Dummy Wafer / Test Wafer / Monitor Wafer

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Product Description

Test Wafer Monitor Wafer Dummy Wafer

PAM-XIAMEN Offers  Dummy Wafer / Test Wafer / Monitor Wafer

Dummy wafers (also called as test wafers) are wafers mainly used for experiment and test and being different

from general wafers for product. Accordingly, reclaimed wafers are mostly applied as dummy wafers (test wafers).

Dummy wafers are often used in a production device to improve safety in the beginning of production process and

are used for delivery check and evaluation of process form. As dummy wafers are often used for experiment and test,

size and thickness thereof are important factors in most occasions.

In each process, film thickness, pressure resistance, reflection index and presence of pinball are measured using

dummy wafers (test wafers). Also, dummy wafers (test wafers) are used for measurement of pattern size, check

of defect and so on in lithography.

Monitor wafers are the wafers to be used in the case that an adjustment is required in each production step

prior to the actual IC production. For example, when the conditions of each process are set, such as the case of

measuring tolerance of device against ( the variation of ) substrate thickness, monitor wafers are being used as

a substitution of high-standard and high value wafers. Moreover, they are also used for the monitoring purpose in

the process together with product wafers. Monitor wafers are necessary wafer materials as important as product

prime wafers. They are also called as test wafers together with dummy wafers.

For more product detail or if you have required specification, please contact us at luna@powerwaywafer.com or powerwaymaterial@gmail.com.

 

Test Wafer

Single Side Polished Test Wafer N Type (200Nos)

Sl No  Item  SCL SPECIFICATIONS
1 Growing method CZ
2 Wafer Diameter 150 ± 0.5mm
3 Wafer Thickness 675±25 µm
4 Wafer Surface Orientation <100>±2°
5 Dopant Phosphorus
6 Dislocation Density Less than 5000/cm2
8 Resistivity 4-7Ωcm
9 Radial Resistivity Variation (max.) 15%
10 Flatness
10a ·         BOW (max.) 60 µm
10b ·         TIR (max.) 6 µm
10c ·         TAPER (max.) 12 µm
10d ·         WARP (max.) 60 µm
11  Primary Flat
11a ·         Length 57.5±2.5 mm
11b ·         Orientation {110}±2° as per SEMI Standard
11c  Secondary Flat As per SEMI Standard
12 Front Surface Finish Mirror Polished
13 Max. particles of size ≥0.3µm 30
14 ·         Scratches, Haze, Edge Chips, Orange Peel & Other defects Nil
15 Back Surface Damage free Etched
16 Packing Requirement Should be vacuum sealed in Class ’10’environment in double layer packing.Wafers should be shipped in Fluorware ORION TWO wafer shippers or equivalent make made from ultra clean polypropylene

Double Side Polished Test Wafer N Type (150 Nos)

Sl No Item SCL SPECIFICATIONS
1 Growing method CZ
2 Wafer Diameter 150 ± 0.5mm
3 Wafer Thickness 675±25µm
4 Wafer Surface Orientation <100>±2°
5 Dopant Phosphorus
6 Dislocation Density Less than 5000/cm2
8 Resistivity 4-7Ωcm
9 Radial Resistivity Variation (max.) 15%
10 Flatness
10a ·         BOW (max.) 60 µm
10b ·         TIR (max.) 6 µm
10c ·         TAPER (max.) 12 µm
10d ·         WARP (max.) 60 µm
11 Primary Flat
11a ·         Length 57.5±2.5 mm
11b ·         Orientation {110}±2° as per SEMI Standard
11c Secondary Flat As per SEMI Standard
12 Front Surface Finish Mirror Polished
13 Max. particles of size ≥0.3µm 30
14 ·         Scratches, Haze, Edge Chips, Nil
Orange Peel & Other defects
15 Back Surface Mirror Polished
16 Packing Requirement Should be vacuum sealed in Class ’10’
environment in double layer packing.
Wafers should be shipped in Fluorware
ORION TWO wafer shippers or equivalent
make made from ultra clean polypropylene

Monitor Wafer / Dummy Wafer

Monitor / Dummy Silicon wafer

Wafer Diameter Polished Wafer Surface Wafer Thickness Resistivity Particle
Orientation
4″ 1 side 100/111 250-500μm 0-100 0.2μm≤qty30
6″ 1 side 100 500-675μm 0-100 0.2μm≤qty30
8″ 1 side 100 600-750μm 0-100 0.2μm≤qty30
12″ 2 side 100 650-775μm 0-100 0.09μm≤qty100

REGENERATED 200mm WAFERS

Item# PARAMETER Units Value Notes
1 Growth Method CZ
2 Orientation 1-0-0
3 Resistivity Ωм.см 1-50
4 Type / dopant р,n/
Boron, Phosphorus
5 Thickness мкм 1гр. – 620,
2гр. – 650
3гр. – 680
4гр. – 700
5гр. – 720
6 GBIR (TTV мкм 1-3гр. <30,
4-5гр. <20
7 GLFR (TIR мкм <10
8 Warp мкм <60
9 Bow мкм <40
10 Metal contamination 1/см2 <3E10
11 Front surface Polished
12 Front surface visual:
Haze, Scratches, Stains, Spots none
Orange Peel none
Cracks, Craters none
13 Front Side LPD: Number of wafers with stated parameter value should be not less than 80% of batch,
< 0,12мкм <100
<0,16мкм <50
<0,20мкм <20
<0,30мкм <10

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