The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]

 Retention and thermal release behavior of deuterium and helium implanted in SiC.

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab（USA）,University of California, [...]

taes

4″ Silicon Wafer-3

PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 100 P Boron CZ -100 1-20 43768 P/P PRIME 100 P Boron CZ -100 1-20 40-60 P/P PRIME 100 P Boron CZ -100 1-20 80-100 P/P PRIME 100 P Boron CZ -100 1-20 180-200 P/P PRIME 100 P Boron CZ -100 1-20 300-350 P/E PRIME 100 P Boron CZ -100 1-20 300-350 P/P PRIME 100 P Boron CZ -100 1-20 350-400 P/P PRIME 100 P Boron CZ -100 1-20 375-425 P/E PRIME 100 P Boron CZ -100 .001-.005 450-500 P/P PRIME 100 P Boron CZ -100 .005-.02 450-500 P/P PRIME 100 P Boron FZ -100 >3000 450-500 P/P PRIME 100 P Boron CZ -100 1-20 450-500 P/P PRIME 100 P Boron CZ -100 .001-.005 500-550 P/E PRIME 100 P Boron CZ -100 .005-.02 500-550 P/E PRIME 100 P Boron FZ -100 >3000 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E/DTOx PRIME 100 P Boron CZ -100 1-20 500-550 P/E/Ni PRIME 100 P Boron CZ -100 1-20 500-550 P/E/WTOx 100 P Boron CZ -100 1-20 950-1050 P/E PRIME 100 P Boron CZ -100 1-20 950-1050 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]

LED Epiwafer Specification

LED Epiwafer Specification https://www.powerwaywafer.com/led-epiwafer.html For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered [...]

New graphene fabrication method uses silicon carbide template

New graphene fabrication method uses silicon carbide template Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far. (PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]