The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding

Ge/SiO₂ direct wafer bonding by O₂-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO₂ low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO₂ bonding was achieved after a 150⁰C annealing for 60 hours. The excessive O₂-plasma exposure resulted in micro-crack formation close to the bonding interface in Ge. A model involved micro-crack formed in Ge was proposed. Our experiments, for the first time, demonstrated that a perfectly seamless bonding of Ge/SiO₂ by O₂-plasma pretreatment depends not only on optimal O₂-plasma pretreatment time but also on the manner of the raised annealing temperature to enhance the bonding strength. A slowly ramping rate heating is crucial to accomplish perfectly seamless Ge/SiO₂ wafer bonding apart from an optimal O₂-plasma exposure time chosen.

Source:IOPscience

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2020-03-09

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