The role of carbon and SiO2 in solid-state sintering of SiC

The role of carbon and SiO2 in solid-state sintering of SiC

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Article title:

The role of carbon and SiO2 in solid-state sintering of SiC

Published by:

Eran Gross;Dana Benes Dahan;Wayne D. Kaplan.

Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel.

Picture of SiC:








The role of carbon in reducing SiO2 during solid-state sintering of SiC was directly shown using a model experiment, where transmission electron microscopy was used to follow oxidation and reduction of the surface of SiC single crystals. These results corroborated the microstructural characterization of pressureless sintered polycrystalline SiC, undoped or doped with carbon (3 wt.%) and boron (0.5 wt.%). While samples doped with carbon and boron reached a density of 96% after 4 h of sintering at 2100 °C, undoped samples did not sinter, and the microstructure was characterized by particle coarsening and a film of SiO2. The lack of densification for undoped samples is explained by the low surface energy of SiO2 compared to the grain boundary energy of SiC, which reduces the driving force for densification.

Subject(s): SiC ; Sintering ; Dopants, Surface energy ; TEM ; Carbon.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… 2.2. Model experiments: Oxidation/reduction. 6H SiC single crystals (Xiamen Powerway
Advanced Material, N-doped) were used in the oxidation-reduction experiments.
Transmission electron microscopy (TEM) plan-view samples …”


About Xiamen Powerway Advanced Material Co., Ltd

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

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