How is silicon carbide (SiC) chip made? Generally speaking, chips are semi-finished products that have been cut from wafers. PAM-XIAMEN can offer SiC wafers for making chips, more specifications please refer to https://www.powerwaywafer.com/sic-wafer. Each wafer integrates hundreds of chips, and each chip consists of [...]
2022-07-27meta-author
Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]
2022-06-06meta-author
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual [...]
2019-03-07meta-author
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 500-550 P/E/WTOx 100 N Phos CZ -100 1-50 2900-3100 P/E PRIME 100 N Phos CZ -100 50-70 4850-5050 P/E PRIME 100 N Phos CZ -100 1-50 5900-6100 P/E PRIME 100 N Phos CZ -100 >10 9900-10100 P/P PRIME 100 N Phos CZ -111 1-10 4000-6000 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/P PRIME 100 N Phos FZ -111 2000-4000 275-325 P/P PRIME 100 N Phos CZ -111 450-500 P/P PRIME 100 N Phos FZ -111 > 20000 475-525 P/P PRIME 100 N As CZ -111 .001-.005 500-550 P/E PRIME 100 N Phos CZ -111 1-20 500-550 P/E PRIME 100 N Phos FZ -111 2000-4000 500-550 P/P PRIME 100 N Phos CZ -111 1-20 4800-5200 P/E PRIME 100 N Phos CZ -111 1-3 11300-11500 P/E PRIME 100 N Phos CZ -110 450-500 P/P PRIME 100 N Phos CZ -110 1-20 500-550 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 175-225 P/P PRIME 100 P Boron CZ (100)-4 0.01-0.02 200-250 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 325-375 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM XIAMEN offers TiO2 Coated Sodalime Glass. TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm TiO2 Coated Sodalime Glass Dimension: 1″ x1″x 0.7mm Polish: both sides are optically clear Nominal TiO2 film thickness: 150 nm +/- 10% For more information, please visit our website: [...]
2019-04-29meta-author
GaAs is a typical III-V direct bandgap semiconductor material with excellent optoelectronic properties and high mobility, making it suitable for the production of high-speed RF devices. GaAs can also form quantum well structures with GaAlAs, further improving the performance of light-emitting devices (low threshold [...]
2023-03-24meta-author