Thermal Oxide Wafers, 2 – 4″ Research Grade-1

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.

Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface , to act as doping barriers and as surface dielectrics .

Thermal Oxide Wafers <2”

Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm

Thermal Oxide Wafer: 285nm SiO2 on Si (100), 5 x 5 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 5×5 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5×5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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