Thermal Oxide Wafers, 2 – 4″ Research Grade-2

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.

Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface , to act as doping barriers and as surface dielectrics .

Thermal Oxide Wafer 2″ Dia.

Thermal Oxide Wafer, 30 nm SiO2 Layer on Si (100), 2″ dia x 0.50 mm t, N type, As-doped, 1 side polished, R:<0.005 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2″ dia x 0.50 mm t, N type ,As-doped , 1 side polished,R:0.001-0.005 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2″ dia x 0.50 mm t, P type B doped, 1 side polished,R:0.001-0.005 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2″ dia x 0.275 mm t, P type B doped, 1 side polished, R:<0.2-0.4 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2″ dia x 0.5 mm t, N type , undoped, R>1000 ohm-cm

Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2″ dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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