Thermal Oxide Wafers, 2 – 4″ Research Grade-3

PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.

Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and higher dielectric strength. In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface , to act as doping barriers and as surface dielectrics .

Thermal Oxide Wafer 3″ Dia.

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3″dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3″dia x 0.50 mm t, N-type ,P-doped 1SP R:1-10 ohm.cm-1

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3″dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3″dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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