Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer

  • Home
  • News
  • Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
 
We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is the coupling of diffusion, chemical reactions and interface motion with local inhomogeneous mechanical stress fields in the solid matrix. In this note we present a hierarchy of models on various space scales. With more detail we discuss a kinetic model for the Becker–Döring regime and a thermodynamic model to describe diffusion in the vicinity of a single droplet.
Fig. 1. Hierarchy of various thermodynamic and kinetic models for the description of the nucleation and evolution of liquid droplets in solid GaAs.
Source:Journal of Crystal Growth
If you need more information about Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
2013-10-24 , , ,

Share this post

Related Posts

Lead Foil Tape

PAM XIAMEN offers Lead Foil Tape. Lead Foil Tape: 2″ W x 0.0063″ Thick x 36 Yard length 100% pure lead foil tape coated with a compounded synthetic rubber adhesive system which exhibits excellent adhesion to a wide variety of surfaces, especially to metal, [...]

2019-05-10meta-author
Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, [...]

2013-09-06meta-author
V-shaped defects in InGaN/GaN multiquantum wells

V-shaped defects in InGaN/GaN multiquantum wells InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]

2014-01-24meta-author
MoTe2 crystal

PAM XIAMEN offers MoTe2 crystal. MoTe2 (Molybdenum Ditelluride) can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a semiconductor, and can fluoresce. It is part of a class of materials called transition [...]

2019-05-13meta-author
Porous Silicon Wafer

Porous Silicon Wafer PAM XIAMEN offers Porous Silicon Wafer. The novel uses of porous silicon include powering sattelites and perhaps even space ships!       In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]

2019-02-15meta-author
6″ CZ Prime Wafer 1

PAM XIAMEN offers6″ CZ Prime Wafer 1 6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), Particle: 0.5μm, <qty300 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with [...]

2019-09-20meta-author