Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer

Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer

We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is the coupling of diffusion, chemical reactions and interface motion with local inhomogeneous mechanical stress fields in the solid matrix. In this note we present a hierarchy of models on various space scales. With more detail we discuss a kinetic model for the Becker–Döring regime and a thermodynamic model to describe diffusion in the vicinity of a single droplet.

Fig. 1. Hierarchy of various thermodynamic and kinetic models for the description of the nucleation and evolution of liquid droplets in solid GaAs.

Source:Journal of Crystal Growth

If you need more information about Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].

2013-10-24 Diffusion, Interface, Nucleation, Phase diagrams

Related Posts

PAM-XIAMEN Offers GaAs LED wafer

PAM-XIAMEN Offers GaAs LED epitaxy wafer, which is AlGaInP LED (Red LED) stack on GaAs substrate. Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4” is on mass production in 2010. This new product [...]

2018-05-14meta-author

8″ CZ Silicon Wafer SSP

PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP Growth Method: CZ Diameter: 200.0±0.5mm Type/Dopant: P/Boron Orientation: (111) ±0.5° Resistivity: <1Ωcm Notch: SEMI Standard Thickness: 1,000 ±25um TTV <6um Bow <60um Warp <60um Frontside Surface: Polished Backside Surface: Etched Particle ≦[email protected]≧0.3um Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413) For more information, [...]

2021-03-18meta-author

CZT α-ray Probe

PAM-01A1 series detectors are charged particles detector based on planar CZT crystal in a super small size. They have a high energy resolution in vacuum environment. PAM-01A1 integrated custxomized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert α-ray into exponential decay [...]

2019-04-24meta-author

PAM-XIAMEN Offers AlGaN material

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to [...]

2017-11-08meta-author

ITO coated(sodalime) glass

PAM XIAMEN offers ITO coated(sodalime) glass. ITO Physical properties Melting point 1800–2200 K (1526-1926 °C) (2800–3500 °F) Density 7120–7160 kg/m3 at 293 K Color (in powder form) Pale yellow to greenish yellow, depending on SnO2 concentration Values vary with composition. SI units and STP are used except where noted. ITO Coated Glass, 10mmx10mmx 0.7mm ITO Coated Glass Substrate 10mm x 10 mm x [...]

2019-04-28meta-author

76.2mm (3 Inch) Silicon Wafers

PAM XIAMEN offers 1″Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Dia Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Description PAM2266 25.4mm P B <111> >1000 20000um DSP FZ PAM2267 25.4mm P B <100> ANY 400um SSP Thickness is: 400+/-100um. PAM2268 25.4mm ANY <100> 500um SSP Wafers have particles. Wafers sold “As-Is”. PAM2269 25.4mm Undoped Undoped <111> >2000 280um SSP Intrinsic FZ PAM2270 25.4mm Undoped Undoped <100> >5000 73.5um DSP FZ, Float Zone PAM2271 25.4mm P B <100> .01-.05 500um DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2271 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, 1Flat, Soft cst PAM2272 Intrinsic Si:- [111] 1″ 280um P/E FZ [...]

2019-02-19meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.