Ti: Sapphire Crystal

PAM XIAMEN offers Ti: Sapphire Crystal

Ti: Sapphire Crystal

 

Ti Sapphire Crystal

Ti Sapphire Crystal

 

Introduction
Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm.
This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers,
mode-locked oscillators, chirped pulse amplifiers, thin-plate oscillators/amplifiers, and laser detectors and meters.
In addition, the absorption band of titanium gemstone is centered at 490 nm and between 400 and 650 nm.
It is suitable for pumping sources of various lasers, such as argon ion, frequency doubled NdYAG (Nd-YLF) and copper vapor laser.
Due to the 3.2μs fluorescence lifetime, Ti:Sapphire crystals can be effectively used as high-power flash-pumped laser systems.
Feature
• Large gain bandwidth
• Very large emission bandwidth
• Excellent thermal conductivity
• Short excited state lifetime (3.2 us)
• High saturation
• Higher laser cross section
• High damage threshold
• Strong Kerr effect
Application
• Femtosecond laser
• High frequency oscillator
• Helium pulsed laser amplifier
• Multi-path amplifier
• Regenerative amplifier

 

Parameter
Characteristic Value
Chemical formula Ti3+ Al2O3
Crystal structure Hexagonal
Orientation A-Axis within 5°,E-vector parallel to C-Axis
Mass density 3.98 g/cm3
Moh’s hardness 9
Young’s modulus 335 GPa
Tensile strength 400 Mpa
Melting point 2040 °C
Thermal Conductivity 33 W / (m K)
Thermal expansion coefficient ≈ 5 × 10-6K-1
Thermal shock resistance coefficient 790 W/m
Refractive index at a wavelength of 633 nm 1.76
Temperature coefficient of refraction 13 × 10-6K-1
Mass fraction 0.1% titanium doping concentration 4.56 × 1019 cm-3
Concentration (0.05~0.35) wt%
End configuration Flat/Flat or Brewster/Brewster ends Emission
Cross section @790 nm 41 × 10-20 cm2
Coating The standard coating is R < 5.0% @532 nm per side and R < 0.5% 650 nm to 850 nm per side. Custom coating supported

 

Specification
Characteristic Value
Fluorescence 3.2 µs
Emission wavelength tolerance 660~1100 nm
Central radiation 800 nm
Absorption coefficient 0.5~6.0 cm-1
Central absorption wavelength 490nm
Figure of Merit (FOM) 100~300
Verticality
Clear aperture >90%
Surface roughness <λ/8@632 nm
Wavefront distortion <λ/4@632 nm

 

Polishing Specification

Characteristic Value
Orientation Tolerence < 0.5°
Thickness/Diameter Tolerance ±0.05 mm
Surface Flatness <λ/8@632 nm
Wavefront Distortion <λ/4@632 nm
Surface Quality 10/5
Parallel 30″
Perpendicular 15′
Clear Aperture >90%
Chammfer <0.2×45°
Maximum dimensions dia 150mm

 

Standard Product

Aperture dimension/mm Length/mm End surface Coatings FOM
6 5 Brewster Cut >120
10 >150
15 >150
20 >180
5 Right-angle Cut (R<1%)@532 nm +
(R<0.3%)780-820 nm
>120
10 >150
15 >150
20 >180
6×6 5 Brewster Cut >120
10 >150
15 >150
20 >180
5 Right-angle Cut (R<1%)@532 nm +
(R<0.3%)780-820 nm
>120
10 >150
15 >150
20 >180

 

Ti Sapphire Crystal (Absorption & Emission)

Ti Sapphire Crystal (Absorption & Emission)

 

 

 

 

 

 

 

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

Share this post