Ti – Titanium Substrate ( Polycrystalline)

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Ti – Titanium Substrate ( Polycrystalline)

PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).

General Properties  for Titanium

Symbol                 Ti
Atomic Number     22
Atomic Weight:      47.867
Crystal structure:   HCP
Lattice constant at room temperature a:   0.295 nm
Lattice constant at room temperature b:   0.468 nm
Density:                4.506 g/cm3
Melting Point:        1668°C
Boiling Point:         3287°C

Titanium (Ti) Metallic Substrate: 0.5″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 1″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 1″x1″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 10x10x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 10x5x0.5 mm, 1side polished

Titanium (Ti) Foil: 110mm Width x 0.1mm thick x 700 mm Length

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-05-20

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