Ti – Titanium Substrate ( Polycrystalline)

  • Home
  • News
  • Ti – Titanium Substrate ( Polycrystalline)

Ti – Titanium Substrate ( Polycrystalline)

PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).

General Properties  for Titanium

Symbol                 Ti
Atomic Number     22
Atomic Weight:      47.867
Crystal structure:   HCP
Lattice constant at room temperature a:   0.295 nm
Lattice constant at room temperature b:   0.468 nm
Density:                4.506 g/cm3
Melting Point:        1668°C
Boiling Point:         3287°C

Titanium (Ti) Metallic Substrate: 0.5″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 1″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 1″x1″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 10x10x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 10x5x0.5 mm, 1side polished

Titanium (Ti) Foil: 110mm Width x 0.1mm thick x 700 mm Length

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-05-10

Share this post

Related Posts

(Al,In)GaN laser diodes with optimized ridge structures

(Al,In)GaN laser diodes with optimized ridge structures   We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]

2013-03-27meta-author
Intrinsic SiC Epilayer on Silicon carbide substrate

High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: tech@powerwaywafer.com) and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap [...]

2020-03-10meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production

Equipment Shortages Pushes Back Sharp’s OLED Production Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review. The joint venture with Foxconn is a 10th generation display [...]

2016-08-30meta-author
Textured LED gives green light to Li-Fi

  V-pits on the surface of an InGaN LED (left) scatter light into the device’s active layers, known as quantum wells (QWs – right). Credit: American Chemical Society.   Standard light-emitting diodes (LEDs) used for home lighting can now transmit data more rapidly between electronic devices, thanks [...]

2017-08-24meta-author
What Are the Polytypes of Silicon Carbide Single Crystal?

Silicon carbide has a chemical formula of SiC and a molecular weight of 40.1. Although the chemical formula is simple, it has a wide range of applications, which is determined by the silicon carbide polytypes. Structure={components, relationship between components} Silicon carbide is a simple substance, and the components are carbon [...]

2021-04-26meta-author
Electronic scattering leads to anomalous thermal conductivity of n-type cubic silicon carbide in the high-temperature region

This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]

2020-02-11meta-author