Ti – Titanium Substrate ( Polycrystalline)

PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).

General Properties  for Titanium

Symbol                 Ti
Atomic Number     22
Atomic Weight:      47.867
Crystal structure:   HCP
Lattice constant at room temperature a:   0.295 nm
Lattice constant at room temperature b:   0.468 nm
Density:                4.506 g/cm3
Melting Point:        1668°C
Boiling Point:         3287°C

Titanium (Ti) Metallic Substrate: 0.5″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 1″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 1″x1″x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 10x10x0.5 mm, 1side polished

Titanium (Ti) Metallic Substrate: 10x5x0.5 mm, 1side polished

Titanium (Ti) Foil: 110mm Width x 0.1mm thick x 700 mm Length

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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