Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering
InGaN films were grown on (1 1 1) silicon substrates by reactive magnetron sputtering. It was demonstrated that the indium composition in the InGaN films can be controlled by varying the ratio of the applied radio-frequency [...]
2014-02-08meta-author
InGaN
High purity undoped or Intrinsic SiC Epilayer on Silicon carbide substrate(PAM-191014-SIC) are offered, its carrier concentration is extremely low(for detail data, please consult our team: [email protected]) and its resistivity is high, semi-insulating. Some researchers use its property to study color centers in wide band-gap [...]
2020-03-10meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author
Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenidesubstrates and has been extensively explored to avoid the high cost of III–V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready [...]
PAM-XIAMEN can provide wafer polishing service for III-V compound wafers (such as InSb wafer, GaSb wafer, InAs wafer), ultra-thin semiconductor wafer, CZT wafer and other photoelectric materials. We aim to adopt a high-precision chemical polishing process to minimal surface damage. Take the InSb wafer [...]
2022-02-16meta-author
Ternary semiconductor thin films of InAsP epitaxially on InP can be offered to customers for developing a better and a more reliable distributed feedback (DFB) lasers. Our InAsP layer has excellent properties, the size of the InAsP layer can be controlled by the height [...]
2017-08-16meta-author
