The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author
Thinking thin brings new layering and thermal abilities to the semiconductor industry
This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or [...]
2017-07-26meta-author
PAM XIAMEN offers 4″ Prime Silicon Wafer Thickness 675 +/- 20 microns.
Wafers 4 inches in a diameter of monocrystalline silicon with an insulating oxide.
100 mm in diameter
The silicon substrate
orientation<100>
resistivity>10Ωcm
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for [...]
2019-07-02meta-author
PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.
The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
2019-03-07meta-author
PAM XIAMEN offers 3″LiNbO3 single crystal thin film
LiNbO3 single crystal thin film (X，Y，Z), X-cut 10μm; Substrate: 3″ Si 0.5 0.4mm;(PAM-P20412-LNOI )
Structure:Top layer: LiNbO3 single crystal thin film X-cut 10 μm
Substrate: 3″ Si 0.4mm, Resistivity >10,000Ωcm
Surface Roughness<0.5nm
TTV (Thickness Uniformity) <1.2μm, 17 [...]
2020-03-24meta-author
Lithium niobate (LiNbO3) is a compound of niobium, lithium, and oxygen. Its single crystals are an important material for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications.Single crystals of lithium niobate can be grown using the [...]
2019-02-28meta-author
