Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible?
A:Yes, it is no problem, some clients bought our wafers for LLO.
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible?
A:Yes, it is no problem, some clients bought our wafers for LLO.
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of [...]
Q:For pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flipchip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. A:LED light is sourcing from mqw light, emitting in all directions, p-GaN is [...]
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
Q:The ideal waverlength for us is 465 nm, can you offer?. A:It is no problem, but you should know the wavelength should be a range, what we will offer you 465+/-2nm.