Ultra Thin GaAs Wafer

Ultra Thin GaAs Wafer

PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished. PAM190709-GAAS with n type and undoped as follows:

 

N type Ultra Thin GaAs Wafer

 

Item Parameter Spec Sample Data Unit
 1 Growth method VGF VGF
 2 Diameter 50.60.2 50.60.2 mm
3 Type-Dopant N/Si N/SI
4 Resistivity (0.8-9.0)E-3 (1.78-5.69)E-3 Ohm.cm
5 Mobility 21500 1592-2327 cm’/v.s
 6 Carrier Concentration (O.4-4.0)E18 (O.47-4.00)E18. /cm3
7 EPD S5000 65000 /cm’
8 Crystal orientation (100)29+/-0.50off 100).29+/-0.59off degree
toward-<111>A0≈0° toward<1112Aa=o
9 Primary flat Orientation E(0-1-1)+/-0.50 E(0-1-1)+0.50 degree
Length 17+/-1.0 17+/-1.0 mm
10 Secondary flat Orientation E(0-11)0.5° ED(O-11)+0.5° degree
Length 7+/-1.0 7+/-1.0 mm
11 Thickness 110+/-15 110+/-15 um
12 Front Side Surface Polished Polished
13 Back Side Surface Polished Polished
14 TV N/A N/A um
15 Bow N/A N/A um
16 warp N/A N/A um

 

Ultra Thin GaAs Wafer

Ultra Thin GaAs Wafer

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Undoped Ultra Thin GaAs Wafer

 

Item Parameter Spec Sample Data Unit
 1 Growth method VGF VGF
 2 Diameter 50.60.2 50.60.2 mm
3 Type-Dopant N/Si N/SI
4 Resistivity >=1E7 >=1E7 Ohm.cm
5 Mobility >3000 >3000 cm’/v.s
 6 Carrier Concentration /cm3
7 EPD <5000 <5000 /cm
8 Crystal orientation (100)+/-0.5 (100)+/-0.5 degree
9 Primary flat Orientation E(0-1-1)+/-0.50 E(0-1-1)+0.50 degree
Length 17+/-1.0 17+/-1.0 mm
10 Secondary flat Orientation E(0-11)0.5° ED(O-11)+0.5° degree
Length 7+/-1.0 7+/-1.0 mm
11 Thickness 110+/-15 110+/-15 um
12 Front Side Surface Polished Polished
13 Back Side Surface Polished Polished
14 TV N/A N/A um
15 Bow N/A N/A um
16 warp N/A N/A um

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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