Ultra Thin GaAs Wafer

Ultra Thin GaAs Wafer

PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped as follows:

1. Specifications of Ultra Thin GaAs Wafers

1.1 N type Ultra Thin GaAs Wafer

Item Parameter Spec Sample Data Unit
 1 Growth method VGF VGF —
 2 Diameter 50.6土0.2 50.6士0.2 mm
3 Type-Dopant N/Si N/SI —
4 Resistivity (0.8-9.0)E-3 (1.78-5.69)E-3 Ohm.cm
5 Mobility >1500 >1500 cm2/v.s
 6 Carrier Concentration (0.4-4.0)E18 (0.47-4.00)E18 /cm3
7 EPD ≦5000 ≦5000 /cm2
8 Crystal orientation (100)2°+/-0.5°off (100).2°+/-0.5°off degree
toward-<111>Aa≈0° toward<111>Aa=0°
9 Primary flat Orientation EJ(0-1-1)+/-0.5° EJ(0-1-1)+0.5° degree
Length 17+/-1.0 17+/-1.0 mm
10 Secondary flat Orientation EJ(0-11)0.5° EJ(0-11)+0.5° degree
Length 7+/-1.0 7+/-1.0 mm
11 Thickness 110+/-15 110+/-15 um
12 Front Side Surface Polished Polished —
13 Back Side Surface Polished Polished —
14 TV N/A N/A um
15 Bow N/A N/A um
16 warp N/A N/A um

 

Ultra Thin GaAs Wafer

Ultra Thin GaAs Wafer

1.2 Undoped Ultra Thin Gallium Arsenide Wafer
Item Parameter Spec Sample Data Unit
 1 Growth method VGF VGF —
 2 Diameter 50.6土0.2 50.6士0.2 mm
3 Type-Dopant N/Undoped N/Undoped —
4 Resistivity >=1E7 >=1E7 Ohm.cm
5 Mobility >3000 >3000 cm2/v.s
 6 Carrier Concentration – – /cm3
7 EPD <5000 <5000 /cm2
8 Crystal orientation (100)+/-0.5 (100)+/-0.5 degree
9 Primary flat Orientation EJ(0-1-1)+/-0.5° EJ(0-1-1)+0.5° degree
Length 17+/-1.0 17+/-1.0 mm
10 Secondary flat Orientation EJ(0-11)0.5° EJ(0-11)+0.5° degree
Length 7+/-1.0 7+/-1.0 mm
11 Thickness 110+/-15 110+/-15 um
12 Front Side Surface Polished Polished —
13 Back Side Surface Polished Polished —
14 TV N/A N/A um
15 Bow N/A N/A um
16 warp N/A N/A um

 

2. Objectives of Ultra Thin GaAs Wafer

The ultra-thin GaAs wafer is to reduce the on-resistance of the power switch tube, avoid poor thermal conductivity and eliminate long vias through the substrate to achieve interconnection of electricity with the backside of the chip. In addition, ultra thin GaAs wafer can increase the heat and simplify vertical interconnects to improve the device efficiency.

powerwaywafer

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-05-14

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