6 Inch Undoped GaAs Substrate, Prime & Mechanical Grade

6 Inch Undoped GaAs Substrate, Prime & Mechanical Grade

PAM-XIAMEN supplies 6 inch c-doped semi-insulating GaAs substrates, which are prime grade and mechanical grade grown by VGF. For wafer details, please view specifications listed below:

InGaAsN

1. Prime Grade C-doped Semi-insulating GaAs

PAM220704-GaAs-Un

Parameter GaAs-Un-6in-625um-PP UOM
Growth method VGF  
Grade Prime grade (Epi-ready)  
Dopant C doped
Orientation (100) ±0.5°
Orientation Angle N/A °
Diameter 150.0±0.2 mm
Thickness 625±25 or 675±25 um
Notch [010] ± 2°
Notch Depth 1.00-1.25 mm
Notch Angle 89-95 °
CC N/A /cm3
Resistivity@ 22°C ≥1E8 ohm·cm
Mobility ≥5000 cm2/v·s
EPD-AVE ≤7000 /cm2
TTV ≤10 um
TIR ≤10 um
Bow ≤10 um
Warp ≤10 um
Laser Marking N/A
Front  Surface Polished, epi-ready
Back side Surface Polished
Particle Count ≥0.3um≤50/wafer
Packaging Cassette(2 ingots in one cassette allowed)

2. Mechanical GaAs Substrate, C doped

PAM220704-GaAs-Un

Parameter GaAs-Un-6in-625um-PE(Mechanical) UOM
Growth method VGF  
Grade Mechanical grade, Epi-ready  
Dopant C doped
Orientation N/A
Orientation Angle N/A °
Diameter 150.0±0.25 mm
Thickness 600±25 or 625±25 um
Notch [010] ± 2°
Notch Depth 1.00-1.25 mm
Notch Angle 89-95 °
CC N/A /cm3
Resistivity@ 22°C >1E17 ohm·cm
Mobility >4000 cm2/v·s
EPD-AVE N/A /cm2
TTV ≤15 um
TIR N/A um
Bow N/A um
Warp N/A um
Laser Marking N/A
Surface Finish Single Side Polished
Particle Count N/A
Packaging  Cassette(2 ingots in one cassette allowed)


For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

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