6 Inch Undoped GaAs Substrate, Prime & Mechanical Grade

6 Inch Undoped GaAs Substrate, Prime & Mechanical Grade

PAM-XIAMEN supplies 6 inch undoped GaAs substrates, which are prime grade and mechanical grade grown by VGF. For wafer details, please view specifications listed below:

InGaAsN

1. Prime Grade Undoped GaAs

PAM220704-GaAs-Un

Parameter GaAs-Un-6in-625um-PP UOM
Growth method VGF  
Grade Prime grade (Epi-ready)  
Dopant Undoped  
Orientation (100) ±0.5°  
Orientation Angle N/A °
Diameter 150.0±0.2 mm
Thickness 625±25 or 675±25 um
Notch [010] ± 2°  
Notch Depth 1.00-1.25 mm
Notch Angle 89-95 °
CC N/A /cm3
[email protected] 22°C ≥1E8 ohm·cm
Mobility ≥5000 cm2/v·s
EPD-AVE ≤7000 /cm2
TTV ≤10 um
TIR ≤10 um
Bow ≤10 um
Warp ≤10 um
Laser Marking N/A  
Front  Surface Polished, epi-ready  
Back side Surface Polished  
Particle Count ≥0.3um≤50/wafer  
Packaging Cassette(2 ingots in one cassette allowed)  

2. Mechanical GaAs Substrate, Undoped

PAM220704-GaAs-Un

Parameter GaAs-Un-6in-625um-PE(Mechanical) UOM
Growth method VGF  
Grade Mechanical grade, Epi-ready  
Dopant Undoped  
Orientation N/A  
Orientation Angle N/A °
Diameter 150.0±0.25 mm
Thickness 600±25 or 625±25 um
Notch [010] ± 2°  
Notch Depth 1.00-1.25 mm
Notch Angle 89-95 °
CC N/A /cm3
[email protected] 22°C >1E17 ohm·cm
Mobility >4000 cm2/v·s
EPD-AVE N/A /cm2
TTV ≤15 um
TIR N/A um
Bow N/A um
Warp N/A um
Laser Marking N/A  
Surface Finish Single Side Polished  
Particle Count N/A  
Packaging  Cassette(2 ingots in one cassette allowed)  


For more information, please contact us email at [email protected] and [email protected].

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