Undoped Gallium Arsenide(GaAs) Wafer

Undoped Gallium Arsenide(GaAs) Wafer

PAM-XIAMEN offers undoped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC.

No1.Undoped GaAs wafer, 2”size
Diameter:50.8 mm +/- 0.3 mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
US Semi Standard Flats
Major Flat Length: 17+/-1mm
Minor Flat Length: 7+/-1mm
Thickness: 350+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI Ready,
Back Side Etched
No Laser Markings
Packaging: Individual spider style wafer cassettes, sealed in N2 gas,
Class 100 Cleanroom Packing.

No2. Undoped GaAs wafer, 3”size
Diameter: 76.2+/-0.3mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
EJ Semi Standard Flats
Major Flat Length: 22+/-2 mm on (0-1-1)
Minor Flat Length: 11+/-1 mm on (0-11)
Thickness: 625+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI Ready,
Back Side Etched
No Laser Markings
Packaging: Individual spider style wafer cassettes, sealed in N2 gas,
Class 100 Cleanroom Packing.

No3. Undoped GaAs wafer, 4”size
Diameter: 100+/-0.3mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
EJ Semi Standard Flats
Major Flat Length: 32.5+/-2 mm on (0-1-1)
Minor Flat Length:18+/-1 mm on (0-11)
Thickness: 625+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI Ready,
Back Side Etched
No Laser Markings
Packaging: Individual spider style wafer cassettes, sealed in N2 gas,
Class 100 Cleanroom Packing

No4. Undoped Gallium Arsenide Substrates (Semi-insulator) 

method of growing the initial single crystal gallium arsenide = VGF (vertical gradient freeze) 

Crystallographic orientation of the substrate surface = in the (100) direction 

Accuracy of orientation of the substrate surface = +/- 0.5 deg. 

Carbon doping 

Specific resistance = not less than 1 * 10 (7) Ohm * cm 

Surface density of defects, controlled by the number of etch pit density (EPD) = no more than 5000 cm-2 

Diameter 50.8 + \ – 0.4mm 

Thickness 350 + \ – 25 microns 

SEMI-E / J Base cut Orientation 

Face side = polished, epi-ready 

Back side  = polished 

Packaging = individual container for each substrate, packed in a metallized polyethylene bag filled with an inert gas 

Remark:

1.Some parameters can be adjusted, for instance, EJ or US flats are both available;mobility can be higher such as >5000cm2/V.s if necessary, which depends on your detail application or how critical you use it for;
2.Undoped Gallium Arsenide Wafer is usually used for photovoltaic/photo detector device fabrications and micro-electronics, such as GaAs HEMT structure, GaAs HBT wafer etc.
3.All the specification is according to SEMI standards:
SEMI M9 – Specification for Polished Monocrystalline Gallium Arsenide Wafers:
SEMI M9.1-0813 — Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications, which is used in undoped GaAs wafer
SEMI M9.2-0813 — Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications, which is used in undoped GaAs wafer
SEMI M9.3-0812 — Specification for Round 2 inch Diameter Polished Monocrystalline Gallium Arsenide Slices for Optoelectric Applications, which is used in n type GaAs wafer
SEMI M9.4-0812 — Specification for Round 3 inch Diameter Polished Monocrystalline Gallium Arsenide Slices for Optoelectric Applications, which is used in n type GaAs wafer
SEMI M9.5-0813 — Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications, which is used in undoped GaAs wafer
SEMI M9.6-0813 — Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers
SEMI M9.7-0914 — Specification for Round 150 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers (Notched)
SEMI M9.8-0306 (Reapproved 0812) — Specification for Round 200 mm Polished Monocrystalline Gallium Arsenide Wafers (Notched), currently we can not make this size.

For more information, please contact us email at [email protected] and [email protected].

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