Undoped Gallium Arsenide(GaAs) Wafer

Undoped Gallium Arsenide(GaAs) Wafer

PAM-XIAMEN offer undoped GaAs wafer as follows:

No1.Undoped GaAs wafers,2”size
Diameter:50.8 mm +/- 0.3 mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
US Semi Standard Flats
Major Flat Length: 17+/-1mm
Minor Flat Length: 7+/-1mm
Thickness: 350+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI Ready,
Back Side Etched
No Laser Markings
Packaging: Individual spider style wafer cassettes, sealed in N2 gas,
Class 100 Cleanroom Packing.

No2. Undoped GaAs wafers,3”size
Diameter: 76.2+/-0.3mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
EJ Semi Standard Flats
Major Flat Length: 22+/-2 mm on (0-1-1)
Minor Flat Length: 11+/-1 mm on (0-11)
Thickness: 625+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI Ready,
Back Side Etched
No Laser Markings
Packaging: Individual spider style wafer cassettes, sealed in N2 gas,
Class 100 Cleanroom Packing.

No3. Undoped GaAs wafers,4”size
Diameter: 100+/-0.3mm
Orientation: (100)+/-0.1deg.
Semi Insulating, Undoped
EJ Semi Standard Flats
Major Flat Length: 32.5+/-2 mm on (0-1-1)
Minor Flat Length:18+/-1 mm on (0-11)
Thickness: 625+/-25um
Resistivity: >1E7 Ohm*cm
Mobility: >=4000 cm2/V*s
CC: Not Specified
EPD: <=5000 cm-2
1 Side Polished (Ra < 5Å), EPI Ready,
Back Side Etched
No Laser Markings
Packaging: Individual spider style wafer cassettes, sealed in N2 gas,
Class 100 Cleanroom Packing

Remark:

1.Some parameters can be adjusted, for instance, EJ or US flats are both available;mobility can be higher such as >5000cm2/V.s if necessary, which depends on your detail application or how critical you use it for;
2.Undoped Gallium Arsenide Wafer is usually used for micro-electronics, such as GaAs HEMT structure, GaAs HBT wafer etc.
3.All the specification is according to SEMI standards:
SEMI M9 – Specification for Polished Monocrystalline Gallium Arsenide Wafers:
SEMI M9.1-0813 — Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications, which is used in undoped GaAs wafer
SEMI M9.2-0813 — Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications, which is used in undoped GaAs wafer
SEMI M9.3-0812 — Specification for Round 2 inch Diameter Polished Monocrystalline Gallium Arsenide Slices for Optoelectric Applications, which is used in n type GaAs wafer
SEMI M9.4-0812 — Specification for Round 3 inch Diameter Polished Monocrystalline Gallium Arsenide Slices for Optoelectric Applications, which is used in n type GaAs wafer
SEMI M9.5-0813 — Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications, which is used in undoped GaAs wafer
SEMI M9.6-0813 — Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers
SEMI M9.7-0914 — Specification for Round 150 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers (Notched)
SEMI M9.8-0306 (Reapproved 0812) — Specification for Round 200 mm Polished Monocrystalline Gallium Arsenide Wafers (Notched), currently we can not make this size.

For more information, please visit our website: https://www.powerwaywafer.com/gaas-wafers/gaas-wafer.html
and send us email at victorchan@powerwaywafer.com 

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