Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to [...]
2017-11-08meta-author
Top 10 Publication in in Microelectronics & Electronic Packaging by Citation
Post: PAM-XIAMEN, date: Jan 13,2020
PAM-XIAMEN has compiled top 10 the ranking data and the publication name in Microelectronics & Electronic Packaging by citation in impact factor(h5-index and h5 median, according to google scholar)
PAM-XIAMEN is [...]
2020-01-13meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors
A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]
PAM XIAMEN offers LD Bare Bar for 976nm@cavity 4mm.
Brand: PAM-XIAMEN
Wavelength: 976nm
Filling Factor: 10%
Output Power: 35W
Cavity Length:4mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
Charge Sensitive Pre-amplifier Chip
PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.
Specifications Comparison
Brands
(PAM-01C)
Gremat(PAM-110)
Dimensions
24×15×3mm3
22.7×21×3.4mm3
Weight
5g
2.5g
Power
<0.3W
0.66W
Powered by
±12V
±12V
Operation temperature
-20℃-+40℃
-20℃-+40℃
Equivalent noise level
ENC:180e-
ENC:260e-
Falling edge time
250-400us
150-200us
Gain
G=5mv/fc
G=3.4mv/fc
Input charge [...]
2019-04-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
7-11
SEMI Prime
n-type Si:P
[100]
4″
224
P/E
5-10
SEMI Flats (two), Cassette of 12 + 13 wafers
n-type Si:P
[100]
4″
224
BROKEN
5-10
SEMI Test
n-type Si:P
[100]
4″
500
P/P
4-6
SEMI Prime
n-type Si:P
[100]
4″
350 ±10
P/P
3-5
SEMI Prime
n-type Si:P
[100]
4″
350
P/P
3-5
SEMI Test, Haze, pits, scratches
n-type Si:P
[100]
4″
450
C/C
3-5
SEMI Prime
n-type Si:P
[100]
4″
525
P/P
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
500 ±10
P/P
2-5
SEMI TEST (wafers have spots resembling water splashes, [...]
2019-03-05meta-author