PAM XIAMEN offers Vanadium( V ) substrate ( Polycrystalline).
Vanadium is a chemical element with the symbol V and atomic number 23. It is a hard, silvery gray, ductile and malleable transition metal. The element is found only in chemically combined form in nature, but once isolated artificially, the formation of an oxide layer stabilizes the free metal somewhat against further oxidation. Andrés Manuel del Río discovered vanadium in 1801 by analyzing a new lead-bearing mineral he called “brown lead,” and named the new element erythronium (Greek for “red”) since, upon heating, most of its salts turned from their initial color to red. Four years later, however, he was convinced by other scientists that erythronium was identical to chromium. The element was rediscovered in 1831 by Nils Gabriel Sefström, who named it vanadium after the Germanic goddess of beauty and fertility, Vanadís (Freyja). Both names were attributed to the wide range of colors found in vanadium compounds. Del Rio’s lead mineral was later renamed vanadinite for its vanadium content.
General Properties for Vanadium:
Atomic Number 23
Atomic Weight: 50.9415
Density (near r.t):6.0 g.cm−3
Liquid density at m.p: 5.5cm−3
Melting Point: 1910°C
Boiling Point: 3407°C
Vanadium Substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished
Vanadium Foil (V) Foil: 0.25mm t x50 mm W x 100 mm L – MF-V-Foil-100L-0.25T
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.