VCSEL Laser Wafer Chip

VCSEL Laser Wafer Chip

PAM-XIAMEN offer 850 nm,850nm and 940nm VCSEL(vertical-cavity surface-emitting laser) epitaxial wafer for the tele communication, gesture recognition,3D imaging and other applications, which is grown by MOCVD by with GaAs/AlGaAs multiple quantum wells (MQWs) as the active layer.

We have three items: VCSEL epitaxial wafer(3”,4”), VCSEL Uncleaved wafer but taped out and tested,6”(you can cut it and use them directly), VCSEL Wafer Die.

1.VCSEL Uncleaved wafer but taped out and tested,6”(you can cut it and use them directly), VCSEL Wafer Die.

Wavelength Chip Power VCSEL Uncleaved wafer but taped out and tested
Wafer Die 6 inch size
808nm 1.2W /
850nm 1.2W /
940nm 2W /
940nm 3W /
1.1:808nm VCSEL Die at 1W
Power 1.2 W 
Working current 1.8 A 
Center wavelength 809.8 nm 
Spectral width(FWHM)1.1 nm 
Test temperature 20 ℃ 
Spot size 11 um 
Spot arrangement Closely 
Min pitch 23.3 um 
Threshold current 0.43 A 
Working voltage 2.1 V 
Far divergence 21.4 ° 
Angle  –
Slope efficiency 0.88 W/A 
IPCE 31.1 % 
Spot number 297 pcs 
Array size 631*535 um2

 

 1.2 850nm VCSEL Die at 1W
Power 1.3 W
Working current 1.8 A
Center wavelength 851.9 nm
Spectral width(FWHM) 2.1 nm
Test temperature 20 ℃
Spot size 11 um
Spot arrangement Closely
Min pitch 23.3 um
Threshold current 0.40 A
Working voltage 2.2 V
Far divergence 23.7°
angle –
Slope efficiency 0.94 W/A
IPCE 33.2 %
Spot number 297 pcs
Array size 631*535 um2

1.3 940nm VCSEL Die at 2W

Power 2.1 W
Working current 2.8 A
Center wavelength 948.2 nm
Spectral width(FWHM) 1.3 nm
Test temperature 50 ℃
Spot size 11 um
Spot arrangement Closely
Min pitch 33 um
Threshold current 0.38 A
Working voltage 2.0 V
Far divergence 19.8 °
angle –
Slope efficiency 0.87 W/A
IPCE 36.8 %
Spot number 305 pcs
Array size 815*715 um2

1.4 940nm VCSEL Die at 3W

Power 2.7 W
Working current 3.5 A
Center wavelength 949.6 nm
Spectral width(FWHM) 1.1 nm
Test temperature 50 ℃
Spot size 11 um
Spot arrangement Closely
Min pitch 40 um
Threshold current 0.47 A
Working voltage 2.0 V
Far divergence 20.8°
angle –
Slope efficiency 0.86 W/A
IPCE 36.7 %
Spot number 364 pcs
Array size 1016*910 um2

 

2.VCSEL Epitaxial Wafer(3”,4”)

2.1VCSEL Epitaxial Wafer Structure:

p+-GaAs
P-AlGaAs
P-DBR
Al0.98GaAs
MQWs
AlGaAs
n-DBR
n-GaAs buffer layer
n-GaAs substrate

2.2VCSEL Epitaxial Wafer Parameters:

Parameters                                 Typical Values
SB center                                     < ±10 nm
Thickness uniformity                   < ±2.5%
PL wavelength uniformity            < ±1.5 nm
Doping control                             < ±30%
Mole Fraction (x) Tolerance        < ±2%

 

2.3VCSEL Device Performance:

Parameters                                Typical Values
Threshold current@25℃          < 2 mA (15mm aperture)
Wavelength                              845-855 nm
Slope efficiency                        > 0.5 W/A
Operating temperature            0℃ ~ 80℃

 

For more information, send us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com 

 

 

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