Silicon carbide (SiC) single crystals are at the forefront of the silicon carbide industry chain, and are the foundation and key to the development of the high-end chip industry. The larger the SiC substrate size, the more chips can be manufactured on per unit substrate, and [...]
2023-03-31meta-author
808nm laser diode wafer is offered by PAM-XIAMEN on N-type GaAs substrate. According to the material used in the active area, the LD wafer is mainly divided into two kinds with aluminum and without aluminum. More details please see below:
1. Laser Diode Wafer Specs
No. 1 808nm Epi Wafer [...]
2019-03-13meta-author
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
2021-04-26meta-author
Silicon Carbide Circuits on the Way
Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Arsenic
N+
100
57,5 ± 2,5
110 ± 1
0.0 ± 1.0 °
0.0028-0.0035 Ohmcm
150 ± 0.5 mm
440 ± 20 µm
40
5
40
6
SSP
Arsenic
N+
111
57,5 ± 2,5
110 ± 1
4.0 ± 0.5 °
< 0.0035 Ohmcm
150 [...]
2019-02-25meta-author
PAM XIAMEN offers 3″CZ Prime Silicon Wafer
Item3, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
[...]
2020-03-25meta-author