PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
SI.
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
76.2
SI.
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Undoped
CZ
-100
>30
300-350
P/P
EPI
76.2
Undoped
CZ
-100
>30
350-400
P/E
EPI
76.2
N
Sb
CZ
(100)-6
.01-.04
100-200
P/E
TEST
76.2
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
76.2
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
76.2
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
76.2
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
76.2
Shipping Cassette
ePak
Holds25Wafers
Clean Room
In addition, we can offer substrate used as Alpha Spectrometer Consumables:
Silicon substrate (PAM210610 – SI)
Main technical characteristics:
Material: silicon (can be replaced with quartz).
Diameter – (74.0 ± 0.5) mm.
Thickness – (0.5 ± 0.05) mm.
Grinding [...]
2019-03-04meta-author
PAM-XIAMEN offers Ultra Thin GaAs Wafer with both side polished, which is for high-end products in the communication electronics or optoelectronics. The general thickness of the existing GaAs wafer is over 350μm, and the target thickness of the ultra-thin grinding disc is 100μm. PAM190709-GAAS with n type and undoped [...]
2020-05-14meta-author
PAM XIAMEN offers GaN LED epiwafer, which is grown on a patterned sapphire substrate (Al2O3) heated to an appropriate temperature, the gaseous substance InGaAIP is transported to the surface of the substrate in a controlled manner, and a specific single crystal film is grown. At [...]
2019-03-15meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – [...]
2019-07-04meta-author
PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Growth method
Czochralski method
Unit cell constant
a=3.756Å c=12.63 Å
Melt point(℃)
1650
Density
5.92(g/cm3)
Hardness
6-6.5(mohs)
Dielectric constants
ε=16.8
Size
10×3,10×5,10×10,15×15,20×15,20×20
Ф15, [...]
2019-03-14meta-author