PAM XIAMEN offers WSe2 Crystal.
WSe2 (Tungsten Diselenide) is a very stable semiconductor in the group-VI transition metal dichalcogenides. WSe2 photoelectrodes are stable in both acidic and basic conditions, making them potentially useful in electrochemical solar cells. Also, the material can be changed from [...]
2019-05-21meta-author
The demand of photodetectors fabricated on InGaAs/InP PIN wafer operating at around 1300nm~1550nm has increased significantly. So that is great news for semiconductor wafer foundries, like PAM-XIAMEN, who offer semiconductor substrate and epitaxial wafer for electronic and power devices fabrication. InGaAs wafer for PIN [...]
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
2013-08-01meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]
2020-02-11meta-author