Highlights
•Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice.
•Emphasis on understanding the inconclusive crystalline morphology at initial layers.
•Observed low TD in HRTEM and low RMS in AFM.
•Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD.
•SAEDP shows fcc [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to [...]
2017-11-15meta-author
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters.
These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering.
[...]
2018-11-01meta-author
Progress in bulk GaN growth*
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]
2018-05-29meta-author
Dummy grade single crystal indium phosphide wafer is available with doping S grown by VGF. The electron concentration of the N-type indium phosphide wafer reaches 1018cm-3, and the indium phosphide resistivity is very low, generally 10-2~10-3Ω·cm. It is mostly used in high-speed optoelectronic devices, such as LD, LED, [...]
2021-08-06meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2885
p-type Si:B
[100]
4″
500
P/P
1–50
SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM [...]
2019-02-22meta-author