Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics
The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
InGaAs/InAlAs heterostructure is realized on GaAs substrate. This GaAs-based metamorphic high electron mobility transistor (mHEMT) heterostructure can reduce the stress at the interface between heterostructure and GaAs through the gradual change of In composition. Such a mHEMT structure can provide device performance that is [...]
The Gallium Nitride Era is Coming
Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
2018-08-09meta-tác giả
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ [...]
PAM XIAMEN offers BiFeO3 Film on (Pt/Ti/SiO2/Si).
150 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp
400 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp
BiFeO3 Film(400nm) on (Pt/Ti/SiO2/Si),10x10x0.5mm
For more information, please visit our website: [...]
2019-04-26meta-tác giả
PAM-01A series are planar CZT crystal based detector which is super small. With high sensitive CZT crystal and low noise charge sensitive amplifier built in, they can detect energy spectrum of X-ray and low energy γ-ray in a high resolution.
1. Specification of High [...]
2019-04-24meta-tác giả