PAM XIAMEN offers Large Size Photomask.
Chromium plate accuracy (Standard Size:430mmx430mm)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
5μm/5μm
10μm/10μm
20μm/20μm
CD Control
±0.15μm(QZ)
±0.5μm
±1.0μm
±2.0μm
Total Pitch Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±2.0μm
Registration Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Overlay Accuracy
±0.5μm(QZ)
±1.0μm
±2.0μm
±3.0μm
Orthogonality
±0.75μrad
±2.0μrad
±3.0μrad
±4.0μrad
Chrome plate material (Photomask blank plate)
Material
SodaLimeGlass、Quartz
Max. Size
850mm*1400mm
Normal Size
420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm,
800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm
Thickness
2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm,
5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ)
Film Type
LowReflectanceChrome
Optical Density
(λ=450nm)
BetweenPlates3.0±0.3InPlate±0.3
Reflectivity
(λ=436nm)
BetweenPlates10±5%InPlate±2%
Main application areas:
1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries
2、HDI, [...]
2019-07-04meta-author
Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and [...]
2022-11-25meta-author
PAM XIAMEN offers Single crystal LiGaO2.
LiGaO2 (001 ) 10x10x0.35mm, 2sp, with domain
LiGaO2 (001 ) 10x10x0.5mm, 1sp, with domain”
LiGaO2 (001 ) 10x10x0.5mm, 2sp
LiGaO2 (010 ) 10x10x0.5mm, 1sp,with doman
LiGaO2 (010 ) 10x10x0.5mm, 2sp
LiGaO2 (100 ) 10x10x0.5mm, 1sp,
LiGaO2 (100 ) [...]
2019-05-07meta-author
PAM XIAMEN offers Single crystal TiO2 (Rutile) with Nb doped.
Rutile ( TiO2) single crystal is one of the most suitable materials for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high [...]
2019-05-20meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
100
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
100
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
100
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
100
N
Phos
CZ
-100
300-350
P/P
PRIME
100
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
100
N
Phos
CZ
-100
350-400
P/P
PRIME
100
N
Phos
CZ
-100
1-3
350-400
P/P
PRIME
100
N
As
CZ
-100
.001-.005
375-425
P/P
PRIME
100
N
Phos
CZ
-100
1-20
375-425
P/E
PRIME
100
N
Phos
CZ
-100
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
450-500
P/P
PRIME
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
PRIME
100
N
Phos
FZ
-100
>3000
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
500-550
P/E
PRIME
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
PRIME
100
N
Phos
FZ
-100
>3000
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author