Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and [...]
2022-11-25meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer-14
3″ Si wafer(32849), R≥200Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: N-type/ phosphorus
.3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> axis direction
5. Resistivity: ≥200Ωcm
6. Primary surface: semi std
7. Secondary surface: none
8. Thickness: 380±25μm
9. Overall thickness variation on the plate [...]
2019-11-08meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our [...]
2017-11-30meta-author
SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of View the MathML source
using silane [...]
Highlights
•
The temperature-dependent strengths of CVD ZnS were obtained.
•
The thermal shock behavior of infrared window was studied by finite element method.
•
Rapid heating thermal shock tests were conducted to validate the numerical results.
Abstract
The thermal shock failure has been recognized as one of key failure modes of [...]
2018-01-24meta-author