PAM-XIAMEN offers high-quality AlN on silicon and sapphire wafer, which is AlN epitaxial thin film grown on single crystal sapphire/Si substrate, that way can provide the most cost-effective solution to grow high quality III-V nitride thin film.
1. Wafer List:
Undoped AlN Template on Sapphire, [...]
2019-04-16meta-author
In the production process of single crystal silicon, impurities such as carbon and oxygen are inevitably introduced due to factors such as raw materials and methods, which directly affect the performance of single crystal silicon. For example, the annealed silicon wafer supplied by us, [...]
2022-06-29meta-author
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers.
1. Specification of 440-460nm Blue GaN LD wafer
PAM190909-GAN-LD
Item
Descriptions
Materials
Substrate
blue laser
440-460nm
InGaN
2 inch Sapphire substrate***
GaN Blue LD EPI Wafer Spec
Spec
LD Epitaxial Wafer Size
Growth
MOCVD
Diameter
50.8 ± 0.2 [...]
2018-08-22meta-author
PAM XIAMEN offers LaF3 crystal.
Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Growth
Max. Xtl Size
Trigonal
a=b= 7.190 c=7.367 a=b=90o, g=120o
1493
5.936
4.5
Bridgman
20dx 100mm
LaF3 (100)ori. 9x9x0.5mm 1sp
LaF3 (100)ori. 10x10x0.5mm 1SP
LaF3 (100)ori. 7x7x0.5mm 2sp
LaF3 6.35 mm Dia. x 1.575mm ,fine ground
LaF3 (110)ori. 6 mm Dia. x 0.5mm 1sp
LaF3 (100)ori. 10 mm Dia. [...]
2019-05-07meta-author
We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial [...]
2018-08-14meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of LT-GaAs wafer, offers low-temperature grown gallium arsenide on GaAs substrate wafer. Our LT-GaAs epi layer has excellent properties, GaAs films with LT-GaAs layers were grown by molecular beam epitaxy (MBE) method at a low temperature substrate. The grown structures were [...]
2017-08-30meta-author