Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were controllably produced under varying conditions and subsequently analyzed. The thermal oxidation was performed in a dry oxygen atmosphere at different temperatures and different oxidation times. Each oxide layer was identified [...]
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
PAM XIAMEN offers 4″ Silicon Oxide Wafer
4″ Silicon Oxide Wafer
Diameter (mm): 100mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any [...]
2020-04-26meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-15
4″ CZ Silicon Wafer
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-12-30meta-author
Highlights
•GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays.
•Transmission electron microscopy images revealed arrays of 90° misfit dislocations.
•Threading dislocation densities of around View the MathML source were found in each case.
•Lower dark currents and higher quantum efficiency was found [...]
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[111-2.5°]
3″
300
P/E
0.014-0.018
SEMI Prime
n-type Si:Sb
[111-3.5°]
3″
380
P/E
0.014-0.016
SEMI Prime
n-type Si:Sb
[111-3°]
3″
300
P/E
0.011-0.016
SEMI Prime
n-type Si:Sb
[111] ±0.5°
3″
300
P/P
0.01-0.20
SEMI Prime
n-type Si:Sb
[111]
3″
380
P/E
0.008-0.025
SEMI Prime
n-type Si:As
[111-0.5°]
3″
380
P/P
0.003-0.005
SEMI Prime
n-type Si:As
[111]
3″
380
P/E/P
0.002-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
3″
380
P/E
0.002-0.005
SEMI Prime
n-type Si:As
[111-4°]
3″
380
P/E
0.002-0.005
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-03-06meta-author