Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less [...]
By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction.
Field effect transistor
Type
Name
Principle
FET
JFET
Junction
PN junction
MOSFET
Metal oxide semiconductor
MESFET
Metal semiconductor
Schottky junction
MODFET
Modulation doping
HEMT
High electron mobility
In fact, a Schottky junction can be realized through another structure.
Definitions of Junctions
Starting from [...]
2021-04-02meta-author
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters.
These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering.
[...]
2018-11-01meta-author
We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications.
1. 2″ LT-GaAs Wafer Specification:
Item
Specifications
Diamater(mm)
Ф 50.8mm ± 1mm
Thickness
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
Resistivity(300K)
>108 Ohm-cm
Carrier
<1ps
Dislocation Density
<1×106cm-2
Useable Surface Area
≥80%
Polishing
Single side polished
Substrate
GaAs substrate
Remark: Other conditions:
1) GaAs substrate should be undoped/semi-insulating with (100)orientation.
2) Growth temperature: ~ 200-250 C
2. [...]
We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]
2018-01-10meta-author