PAM XIAMEN offers D263 Glass Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Our clients use our Schott D263 glass for the following applications:
Touch Panel Controls
Liquid Crystal Displays (LCD)
Electroluminescent Displays
Solar Cell Protective Glass
Diam
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Grade
50.8mm
550um
DSP
76.2mm
550um
DSP
100mm
500um
DSP
150mm
550um
DSP
200mm
500um
DSP
300mm
500um
DSP
For more information, please visit our [...]
2019-02-27meta-author
Highlights
•Nanoscale defects in III–V materials, grown over Si were characterized with CAFM.
•The defects exhibit higher conductivity.
•The contact rectifying feature is hide by a larger current under the reverse bias.
•Patterned samples fabricated using Aspect Ratio Trapping were also characterized.
Abstract
The implementation of high mobility devices requires [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches
Published by:
K. Haehre ; M. Meisser ; F. Denk ; [...]
2019-12-09meta-author
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:
1. Red Infrared AlGaAs / GaAs LED Epi Wafer
PAM-190723-LED
Structure
Thickness, um
Type
Composition
CC, cm-3
Wide-gap window
1
р
AlхGa1-хAs (х=0,25-0,3)
(2-5) ∙1018
Barrier layer
0.06
р
AlхGa1-хAs (х=0,25-0,3)
(0.8-1) ∙1018
Active layer
–
GaAs
undoped
–
Al0,2Ga0,8As
Barrier layer
0.06
n
AlхGa1-хAs (х=0,25-0,3)
(0.5-1) ∙1017
Wide-gap window
6
n
AlхGa1-хAs
(1-2)∙1018
(х=0,3-0,35)
Stop layer
0.1
–
AlхGa1-хAs
–
(х=0,9-1)
Buffer layer
–
n
GaAs
–
Substrate
–
n+
GaAs
–
2. Where is the [...]
2020-05-18meta-author
PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips:
1. Specifications of SiC Chip Substrate
No 1. PAM200508-SIC-AU
10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type.
Grade: dummy
Thickness: approx. 350um
Backside surface: with metal films of Ti-Ni-Au
Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um),
No 2. SiC Wafer with [...]
2020-07-17meta-author
PAM XIAMEN offers Zinc Oxide on Silicon.
The following wafers work
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2 layer on 4″ Silicon wafer
Dry Oxide layer thickness: 100 nm ( 2000A) +/-10%
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455
Note: customized oxide layer [...]
2019-02-26meta-author