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Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers

Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on stacking order. • Dynamics has two regimes [...]

2014-08-10 , , Read more...

enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had a 1-mm-thick LT GaAs layer [...]

2014-07-13 , , Read more...

Si-doped GaN Epitaxial template on sapphire

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire: GaN Template2″ Specification Purity Si-doped GaN Epitaxial template on sapphire Orientation -1 Film thickness >5.0µm ± 0.25µm Diameter 50.8 ± 0.1mm Edge exclusion <1mm Useable surface area > 90% Conduction Type N-Type Resisitivity 0.001 – 0.01 Ohm-cm Carrier Concentration 1E19 /cc Macro [...]

2014-06-19 Read more...

Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches

Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less than 1 nm rms roughness [...]

2014-04-28 Read more...

Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application

Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application The recent development of CdZnTe detectors has made it possible to produce CdZnTe based clinical radionuclide imagers. We therefore investigate the pixellation geometry ideal for this application using numerical simulation. These studies indicate that, for a fixed pixel pitch, configuring the detector with [...]

2014-04-25 Read more...

GaN Wafer

GaN Wafer Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie: GaN substrate wafer GaN on sapphire GaN on silicon HEMT wafer AlN/GaN on sapphire AlGaN/GaN on sapphire Here is relative information of GaN wafer: GaN wafer price/GaN wafer cost: But while LED and power electronics [...]

2014-04-22 Read more...

Effects of sample processing on the performance of CdZnTe crystals

Effects of sample processing on the performance of CdZnTe crystals Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal temperature tolerance during the detector [...]

2014-04-21 Read more...

LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure at the optimum conditions have [...]

2014-04-17 Read more...

UV LED wafer

We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED. 1. Features & Dimensions of UV LED Wafer Growth Technique – MOCVD Substrate Material:Sapphire Substrate (Al2O3) Substrate Conduction: Insulating Substrate Orientation: c-Plane (0001)0.2°±0.1 Diameter: 50.8mm±0.15mm Thickness: 430μm±20μm Wavelength:395nm-405nm   2. [...]

2014-04-14 Read more...