InP wafer

PAM-XIAMEN cung cấp tấm wafer VGF InP (Indium Phosphide) với cấp nguyên tố hoặc cấp thử nghiệm bao gồm loại không pha tạp, loại N hoặc bán cách điện. Tính linh động của tấm lót InP khác nhau ở các loại khác nhau, loại không mở rộng> = 3000cm2 / Vs, loại N> 1000 hoặc 2000cm2V.s (phụ thuộc vào nồng độ pha tạp khác nhau), loại P: 60 +/- 10 hoặc 80 +/- 10cm2 / Vs (phụ thuộc vào nồng độ pha tạp Zn khác nhau), và bán xúc phạm> 2000cm2 / Vs, EPD của Indium Phosphide bình thường là dưới 500 / cm2.

  • Sự miêu tả

Mô Tả Sản Phẩm

InP wafer

PAM-XIAMEN, a leading InP wafer supplier, offers Compound Semiconductor InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating. The InP wafer orientation (111) or (100) is available. And the dopants can be Sulphur, Sn(Tin), Zinc or customs. The Laser Mark as specified on backside of InP wafer along with primary flat. The orientation with slight deflection angle is available, such as (100)0.075° towards [110]]±0.025°.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide [clarification needed] at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. Indium phosphide wafers are used in high-power and high-frequency electronics [citation needed] because of the superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. The InP wafer size we can offer is 2”, 3” and 4”, and the InP wafer thickness will be 350~625um.

Dưới đây là thông số kỹ thuật chi tiết: 

2″ InP Wafer Specification
Mục Specifications
dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 2″
Wafer Orientation (100) ± 0,5 °
Độ dày Wafer Min:325                        Max:375
Tiểu Chiều dài phẳng 16±2mm
Chiều dài phẳng THCS 8±1mm
Carrier Nồng độ 3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N / A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Điện trở N / A N / A N / A N / A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <10um
CÂY CUNG <10um
LÀM CONG <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
gói Single wafer container or cassette

 

2″ P Type InP Wafer Specification 

Mục Tham số UOM
Chất liệu InP
Conduct Type/Dopant SCP/Zn
Cấp nguyên tố
Đường kính: 50,5 ± 0,4 mm
Orientation: (100) ± 0,5 °
Orientation Angle: /
Thickness: Min:325                        Max:375 um
Carrier Concentration: Min:0.6E18                   Max:3E18 cm-3
Resistivity: Min:/                              Max:/ ohm.cm
Mobility: Min:/                              Max:/ cm-2/V.sec
EPD: Ave<:1000                   Max<:/ cm-2
TTV: Max:10 um
TIR: Max:10 um
BOW: Max:10 um
Warp: Max:15 um
Flat Option: EJ
Primary Flat Orientation: (0-1-1)
Primary Flat Length: 16±1 mm
Secondary Flat Orientation: (0-11)
Secondary Flat Length: 7 ± 1 mm
Suface: Side 1:Polished              Side 2:etched
Làm tròn cạnh 0.25(Conform to SEMI Standards) mmR
Particle Count: /
gói individual container filled with  N2
Đã sẵn sàng cho epi Vâng
Laser Marking Mặt sau căn hộ chính
Remark: Thông số kỹ thuật đặc biệt sẽ được thảo luận riêng

 

3″ InP Wafer Specification 

Mục Specifications
dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 3″
Wafer Orientation (100) ± 0,5 °
Độ dày Wafer 600±25um
Tiểu Chiều dài phẳng 16±2mm
Chiều dài phẳng THCS 8±1mm
Carrier Nồng độ ≤3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N / A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Điện trở N / A N / A N / A N / A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <12um
CÂY CUNG <12um
LÀM CONG <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
gói Single wafer container or cassette

 

 4″ InP Wafer Specification 

Mục Specifications
dopant N-type N-type P-type SI-type
Conduction Type Undoped Sulphur Zinc lron
Wafer Diameter 4″
Wafer Orientation (100) ± 0,5 °
Độ dày Wafer 600±25um
Tiểu Chiều dài phẳng 16±2mm
Chiều dài phẳng THCS 8±1mm
Carrier Nồng độ ≤3×1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N / A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70×103cm2/V.s >1000cm2/V.s
Điện trở N / A N / A N / A N / A
EPD <1000cm-2 <500cm-2 <1×103cm-2 <5×103cm-2
TTV <15um
CÂY CUNG <15um
LÀM CONG <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
gói Single wafer container or cassette

 

PL(Photoluminescence) Test of indium Phosphide Wafer

We measure InP wafers by Peak Lambda, Peak int, and FWHM, the spectra mapping is as follows:

spectra mapping of InP wafer

 

About InP Wafer Application

As a new type of compound semiconductor material, InP wafer market share is increasing gradually. Due to the excellent indium phosphide properties, the performance of microwave power source devices, microwave amplifiers and gate FETs fabricated on InP material will be better than those fabricated on existing gallium arsenide materials. Indium phosphide heterojunction lasers are also extremely promising light sources in optical fiber communications.

InP wafer fabrication for devices, like growing millimeter wave microelectronic devices and optoelectronic device materials for optical fiber communications, is widely used. With the continuous improvement of device performance and the reduction of device size, the quality requirements for indium phosphide wafers are getting higher and higher. Therefore, the InP wafer process is optimizing gradually.

The the typical values is see below data:

Peak Lambda(nm) Peak Int FWHM(nm)
1279.4 7.799 48.5
1279.8 5.236 44.6

Bạn cũng có thể thích…