Epi Wafer cho Laser Diode

Epi Wafer cho Laser Diode

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

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Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

bề mặt vật liệu Khả năng Material Bước sóng Ứng dụng
GaAs GaAs / GalnP / AlGaInP / GaInP 635nm  
GaAs Dựa Epi-wafer 650nm Vertical Cavity Surface Emitting Laser (VCSEL)
GaAs / GalnP / AlGaInP / GaInP 660nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703nm  
GaAs / GalnP / AlGaInP / GaInP 780nm  
GaAs / GalnP / AlGaInP / GaInP 785nm  
GaAs Dựa Epi-wafer 800-1064nm LD hồng ngoại
GaAs / GalnP / AlGaInP / GaInP 808nm LD hồng ngoại
GaAs Dựa Epi-wafer 850nm Vertical Cavity Surface Emitting Laser (VCSEL)
GaAs Dựa Epi-wafer <870nm Ảnh-dò
GaAs Dựa Epi-wafer 850-1100nm Vertical Cavity Surface Emitting Laser (VCSEL)
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
GaAs Dựa Epi-wafer 980nm LD hồng ngoại
InP Dựa Epi-wafer 1250-1600nm Avalanche ảnh dò
GaAs Dựa Epi-wafer 1250-1600nm/>2.0um
(InGaAs absorptive layer)
GaAs Dựa Epi-wafer 1250-1600nm/<1.4μm
(InGaAsP absorptive layer)
InP Dựa Epi-wafer 1270-1630nm DFB Laser
GaAsP / GaAs / GaAs chất nền 1300nm  
InP Dựa Epi-wafer 1310nm FP tia laser
GaAsP / GaAs / GaAs chất nền 1550nm FP tia laser
InP Dựa Epi-wafer 1900nm FP tia laser


About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

703nm Laser diode wafer epi

808nm laser diode epi wafer-1

780nm Laser diode wafer epi

650nm laser diode epi wafer

785nm laser diode epi wafer

808nm laser diode epi wafers-2

850nm laser diode epi wafer

905nm laser diode epi wafer

940nm laser diode epi wafer

950nm laser diode epi wafer

1550nm laser diode epi wafer

1654nm laser diode epi wafer

2004nm laser diode epi wafer

GaAs Epitaxy with Thick Growth

Cấu trúc Epi dựa trên GaAs MOCVD Grown cho Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

Các lớp chấm lượng tử InAs trên InP Substrate


Chip Emitter Độc thân

Độc-emitter LD Chip 755nm @ 8W

Độc-emitter LD Chip 808nm @ 8W

Độc-emitter LD Chip 808nm @ 10W

Độc-emitter LD Chip 830Nm @ 2W

Độc-emitter LD Chip 880nm @ 8W

Độc-emitter LD Chip 900 + nm @ 10W

Độc-emitter LD Chip 900 + nm @ 15W

Độc-emitter LD Chip 905nm @ 25W

Độc-emitter LD Chip 1470nm @ 3W

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

LD Bare Bar

LD Bare Bar cho 780nm @ khoang 2.5mm

LD Bare Bar cho 808nm @ khoang 2mm

LD Bare Bar cho 808nm @ khoang 1.5mm

LD Bare Bar cho 880nm @ khoang 2mm

LD Bare Bar cho 940nm @ khoang 2mm

LD Bare Bar cho 940nm @ khoang 3mm

LD Bare Bar cho 940nm @ khoang 4mm

LD Bare Bar cho 940nm @ khoang 2mm

LD Bare Bar cho 976nm @ khoang 4mm

LD Bare Bar cho 1470nm @ khoang 2mm

LD Bare Bar cho 1550nm @ khoang 2mm