FZ Silicon Ignot Diameter 80+1mm-1
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more [...]
2019-07-03meta-author
PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The GaN foundry services include OEM growth service, COW process and various test services. Specifically as follows:
1. OEM Service – Customized AlGaN-based Thin Film Epi Structure
We [...]
2022-11-22meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of View the MathML source
using silane [...]
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6
Substrate Monocrystalline Silicon
Diameter 100 ±0.3mm
Growth method Fz
Lifetime>1000µsec
Thickness 600± 25µm
Type/Dopant N/Phosphorus
Orientation[110]±0.5°
Resistivity>5,000 Ωcm
TTV<10µm
Bow/Warp<40µm
Primary Flat Location@[111]±<0.25°
Primary Flat Length 32.5± 2.5mm
Secondary Flat Location@[111]70.5° CW from primary flat
Front side finish [...]
2019-09-20meta-author
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]
2020-01-20meta-author