GaN on GaN

GaN on GaN

PAM-XIAMEN offers GaN on GaN wafer, which uses the homogeneous substrate. The main application market of GaN-on-GaN epi wafer is blue/green lasers, which are used in laser display, laser storage, laser lighting and other fields.

GaN on GaN Epitaxy

1. GaN on GaN Epitaxy Structure

Item 1:

Epitaxial Layer Thickness
GaN Cap 3nm
AlxGaN  20nm
AIN 1nm
GaN 0.5um
Buffer layer 3um
GaN substrate

 

Item 2: 2” and 4” GaN Sub (N +) PAM201111-GG 

Layer No. Composition Thickness
1st layer N-GaN 10-15μm (Nd-1e15-5e16cm-3)
2nd layer P-GaN 0.5-2μm (Na-1e17-1e19cm-3)

 

Item 3: 2” and 4” GaN Sub (N +) PAM201111-GG 

Layer No. Composition Thickness
1st layer N-GaN 10 to 15μm (Nd-1e15 to 5e16cm-3)
2nd layer P-GaN 0.2-1μm (Na-1e17-1e19cm-3)
3rd layer P-GaN 0.1μm (N4-8e19cm-3)

 

Item 4: 2” and 4” GaN Sub (N +) PAM201111-GG 

1st layer: N-Gan 10-15μ (Nd1e15-5e16cm-3)

2. About the GaN on GaN Technology

GaN-on-GaN has better heat dissipation performance than GaN-on-SiC HEMT due to the higher thermal conductivity of the GaN epitaxial layer. A GaN substrate thinning process can help heat dissipation in GaN-on-GaN HEMTs.

Growing epitaxial layers on independent GaN is an effective way to reduce dislocation density. The dislocation density of the substrate is 106 cm-2 or less, so that compared with the GaN substrate, the dislocation density of the GaN epitaxial layer on GaN is reduced by at least two orders of magnitude.

3. Relevant Industry Criteria for Epitaxy of GaN on GaN

3.1 Material Characteristics of GaN Epi on GaN Substrate

* GaN-on-GaN Epitaxial Wafer Sheet Resistance Uniformity

The distribution of sheet resistance in the gallium nitride epitaxial wafer is generally expressed as the ratio of the difference between the maximum and minimum surface resistance and the average surface resistance.

* Residual Stress of GaN-based GaN Epitaxy

When no external force is applied to the object, there is a stress system in the object that maintains its own phase balance.

3.2 Technical Requirements GaN Epitaxial Grown on GaN Thin Film

The geometry parameters of the GaN on GaN epitaxial wafer should meet the requirements of the corresponding product standards, and the specific items are shown in the following table:

Parameters Technical Requirements
Minimum Rated Value Maximum
Diameter O
Warp O
Thickness P Type O O
Active Layer O O
N Type O O
Note: “-” means that there is no relevant parameter regulation, “O” means that the parameter is stipulated.

 

The surface quality of the GaN epi on GaN film meets the requirements of the product standards in the following table:

Parameters Technical Requirements
Minimum Rated Value Maximum
Scratches O
Point Defect O
Surface Particles O
Surface Roughness O
Note: “-” means that there is no relevant parameter regulation, “O” means that the parameter is stipulated

 

The optoelectronic characteristics of GaN wafers on GaN substrate should meet the requirements of the corresponding product standards:

Category Parameters Technical Requirement
Minimum Maximum
Light-emitting diode Forward voltage/V O O
Reverse voltage/V O
Direction current/uA O
Peak emission wavelength/nm O O
Spectral radiation bandwidth/nm O
Dominant wavelength/nm O O
Electro-optical conversion efficiency/% O
Optical power retention rate/% O O
Electrostatic discharge sensitivity O
Laser diode Forward voltage/V O O
Emission wave/nm O O
Output power/mW O
Output power instability/% O O
Slope/Slope efficiency/% O O
Degree of polarization/% O O
Threshold/mA
Detector Forward voltage/V O O
Dominant wavelength/nm O O
Photoelectric conversion efficiency/% O
Responsiveness/(A/W) O
Response time/s O
Dark current/A O
Microwave power device Thin film resistance/Ω口-1 O
Mobility/cm2V-1s-1 O
Carrier concentration/cm-3 O O
Channel leakage current/uA O
Drain leakage current/uA O
Power electronic power device Thin film resistance/Ω口-1 O
Mobility/cm2V-1s-1 O
Carrier concentration/cm-3 O O
Channel leakage current/uA O
Drain leakage current/uA O
Note: The photoelectric parameters are prepared from the gallium nitride epitaxy wafer on GaN into a standard chip and measured according to the test method of the chip; “-” means that there is no relevant parameter regulation, “O” means that the parameter is stipulated.

 

3.3 GaN on GaN Epitaxial Wafer Standard Test Environment

The standard test environment should meet the requirements of the corresponding method standards. If there is no regulation, the following requirements should be implemented:

a) Temperature: 23+/- 10Deg.;

b) Relative humidity: 20%-80%;

c) Cleanliness: E8 level (if necessary);

d) Air pressure: 86kPa-106kPa;

e) No mechanical vibration, electromagnetic and light interference that affect the accuracy of the test;

f) Unless otherwise specified, all photoelectric parameters of GaN on GaN epitaxial wafers should be performed under thermal equilibrium;

g) The test system should be well grounded.

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For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

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