PAM XIAMEN offers 3″ CZ Si Lapped Wafer
3″ CZ Si Lapped Wafer
N-type
Resistivity6-10Ωcm
Thickness180-185um
Orientation <111>
Double Side Lapped
SEMI Flat
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-01-06meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (001)
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains)
BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains)
BaTiO3 [...]
2019-04-17meta-author
PAM XIAMEN offers Graphene CVD Films and Graphene Oxide.
PAM XIAMEN is a based supplier of high quality graphene films (mono-layer or multi-layer graphene) and graphene oxide products (dry powder or dispersion in water) to both research and industry customers. Our customers include leading research [...]
2019-03-12meta-author
PAM-XIAMEN, a epi service supplier, offers service for processing laser wafer epitaxial growth on polished GaAs substrate and epi on bare substrates for power devices. In the PAM-XIAMEN’s wafer epitaxy foundry, GaAs epitaxy wafer with quantum well laser structure can be processed with the [...]
2018-04-08meta-author
PAM XIAMEN offers GaN on Sapphire for RF.
1. GaN HEMT Structure on Sapphire for RF Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
/
XRD(002)FWHM
/
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
u-GaN cap layer
/
Al composition
20-30%
In composition
17% for InAlN
AlGaN barrier layer
20~30nm
AlN spacer
/
GaN [...]
2019-05-17meta-author