PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
PAM XIAMEN offers Cu Coated Silicon.
Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm
Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm
Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]
2019-04-26meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes
The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]
2014-04-02meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[111-2.5°]
3″
300
P/E
0.014-0.018
SEMI Prime
n-type Si:Sb
[111-3.5°]
3″
380
P/E
0.014-0.016
SEMI Prime
n-type Si:Sb
[111-3°]
3″
300
P/E
0.011-0.016
SEMI Prime
n-type Si:Sb
[111] ±0.5°
3″
300
P/P
0.01-0.20
SEMI Prime
n-type Si:Sb
[111]
3″
380
P/E
0.008-0.025
SEMI Prime
n-type Si:As
[111-0.5°]
3″
380
P/P
0.003-0.005
SEMI Prime
n-type Si:As
[111]
3″
380
P/E/P
0.002-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
3″
380
P/E
0.002-0.005
SEMI Prime
n-type Si:As
[111-4°]
3″
380
P/E
0.002-0.005
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-03-06meta-author
PAM XIAMEN offers PbSe single crystal substrate.
Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
2019-05-14meta-author
PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author