Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenidesubstrates and has been extensively explored to avoid the high cost of III–V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an [...]