wafer siêu phẳng wafer siêu mỏng

Tấm wafer siêu phẳng Tấm wafer siêu mỏng

Bánh wafer siêu phẳng Bánh wafer siêu mỏngr

Chúng tôi cải thiện tính đồng nhất của độ dày tấm bán dẫn (TTV) thông qua các dịch vụ làm mỏng tấm bán dẫn và dịch vụ đánh bóng cơ học hóa học (CMP), giúp chuyển các tấm bán dẫn (như LN, LT, silicon và thạch anh) thành các tấm bán dẫn siêu phẳng hoặc siêu mỏng. Chúng tôi có thể sản xuất tấm silicon siêu phẳng, tấm thạch anh siêu phẳng, tấm LN siêu mỏng, tấm LT siêu mỏng để đáp ứng các nhu cầu khác nhau của khách hàng.

Bánh xốp siêu phẳng
Chất liệu	Kích thước	Độ dày	TTV
LN,LT,Thạch anh,Silic	Thạch anh 3/4/6 inch: 3/4 inch	200 ~ 1000um	1um

Bánh xốp siêu mỏng
Chất liệu	KÍCH THƯỚC	Độ dày
LN, thạch anh	3/4 inch	Phim UV 50 ~ 60um/130um

22-08-2018

có liên quan Bài viết

Silicon Wafer

Silicon Wafer Si wafer Substrate -Silicon Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm 　 a/cm3 cm2/Vs /cm2 1-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A 1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A 1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A 1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A 1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A 1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A 1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A 1-100 p-Si with 285 nm...

2017-03-06 bánh xốp silicon

Silicon Carbide List

4" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area 　 N-Type S4H-100-N-SIC-350-A 4" 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4" 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4" 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * 3" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area 　 N-Type S4H-76-N-SIC-350-A 3" 4H-N 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3" 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3" 4H-N 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * 　 SEMI-INSULATING S4H-76-SI-SIC-350-A 3" 4H-SI 0°/4°±0.5° 350±25um A <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3" 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3" 4H-SI 0°/4°±0.5° 350±25um D <100/cm2 P/P >75% 2" 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area 　 N-Type S4H-51-N-SIC-330-A 2" 4H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2" 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2" 4H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2" 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2" 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2" 4H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2" 4H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2" 4H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2" 4H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * 2" 6H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area 　 N-Type S6H-51-N-SIC-330-A 2" 6H-N 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2" 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2" 6H-N 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2" 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2" 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2" 6H-N 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2" 6H-N 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2" 6H-N 0°/4°±0.5° 5~10mm C <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2" 6H-N 0°/4°±0.5° 10~15mm C <50/cm2 As-cut * 　 SEMI-INSULATING S6H-51-SI-SIC-330-A 2" 6H-SI 0°/4°±0.5° 330±25um A <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2" 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2" 6H-SI 0°/4°±0.5° 330±25um D <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2" 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2" 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2" 6H-SI 0°/4°±0.5° 5~10mm D <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2" 6H-SI 0°/4°±0.5° 10~15mm D <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon...

23-05-2018 Danh sách cacbua silic

Gold Coated Silicon Wafers

E-beam and thermal evaporation of metal coatings (Ti, Cr, Au, Pt, Pd, Al, Cu, Ag etc) on silicon wafers are...

27-11-2019

Superconductor Substrates

Superconductor Substrates Crystal Structure M.P. Density Thermal Expansion Dielectric constant Growth Tech. & max. size standard 1or 2 sides epi polished wafer oC g/ cm3 LSAT Cubic 1840 6.74 10 22 CZ 20x20x0.5mm (LaAlO3)0.3 -(Sr2AlTaO8)0.7 a=3.868 Å Ø35mm 10x10x0.5mm LaAlO3 Rhombo. 2100 6.51 9.2 24.5 CZ Ø3"x0.5mm a=3.790 Å Ø3" Ø2"x0.5mm c=13.11 Å Ø1"x0.5mm 10x10x0.5mm MgO Cubic 2852 3.58 12.8 9.8 Flux Ø2"x0.5mm a=4.21 Å Ø2" 10x10x0.5mm NdGaO3 Orthor. 1600 7.57 7.8 25 CZ Ø2"x0.5mm a=5.43...

2018-07-10

Ge Wafer Supplier

Ge Wafer Substrate-Germanium No. Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Prime flat EPD Ra (mm) (μm) Ω·cm Orientation /cm2 1-100 Ge (100) 50.8 500±25 SSP 0.0138-0.02 P/Ga (110) ≤5000 N/A 1-100 Ge (100) 50.8 500 SSP ≥30 N/undoped N/A N/A <5A 1-100 Ge (100) 50.8 500 SSP 58.4-63.4 N/undoped N/A N/A N/A 1-100 Ge (100) 50.8 500 SSP 0.1-1 P/Ga N/A N/A N/A 1-100 Ge (100) 50.8 500 SSP 0.1-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 50.8 1000 DSP >30 N/A (110) N/A N/A 1-100 Ge (100) 50.8 2000 SSP N/A N/A N/A N/A N/A 1-100 Ge (100) 50.8 4000 SSP N/A N/A N/A N/A N/A 1-100 Ge (111)/(110) 50.8 200000 N/A 5-20 N/A N/A N/A N/A 1-100 Ge (100) 50.8 400 SSP <0.4 N/A N/A N/A N/A 1-100 Ge (100)/(111) 50.8 4000±10 DSP N/A N/A N/A N/A N/A 1-100 Ge (100) 50.8 350 SSP 1-10 P/Ga (110) ≤5000 N/A PAMP20295 Ge (100) 50.8 500±25 SSP 2-10 P/Ga (110) ≤5000 N/A 1-100 Ge (100) 50.8 500±25 SSP 0.3-3 N/Sb (110) ≤5000 N/A 1-100 Ge (100) 50.8 500±25 SSP 0.3-3 P/Ga (110) ≤5000 N/A 1-100 Ge (111) 60 1000 As cut >30 N/A (110) <3000 N/A 1-100 Ge (100) 100 N/A SSP <0.019 P/Ga (110) <500 N/A 1-100 Ge (100) 100 1000±25 SSP ≥30 N/undoped N/A N/A N/A 1-100 Ge (100) off 6°or off 9° 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP <0.01 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP <0.01 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP ≥35 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP ≥35 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100) 100 500 DSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100)6°off (111) 100 185±15 DSP 0.01-0.05 N/A (110) ≤5000 <5A 1-100 Ge (100)6°off (110) 100 525±25 SSP 0.01-0.04 N/A N/A N/A N/A 1-100 Ge (100) 100 N/A N/A N/A N/A N/A N/A N/A 1-100 Ge (100) 100 1000±15 SSP ≥30 N/A (110) ≤5000 N/A 1-100 Ge (100) 100 750±25 SSP ≥30 N/A (110) ≤5000 N/A 1-100 Ge (100) 100 500±25 SSP 10-30 N/A N/A N/A N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <4000 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (111) 100 500±25 SSP <0.4 N/Sb N/A N/A N/A 1-100 Ge (100)6°off-cut toward(111)A 100 175±25 SSP 0.003-0.009 P/Ga (0-1-1) (0-11) <100 N/A PAM210802 Ge (100) 100 175 DSP <0.02 P N/A N/A N/A 1-100 Ge (310)±0.1° 100 200±15 DSP >20 N/A N/A N/A N/A 1-100 Ge (111) 150 600-700 N/A >30 N/A (110) N/A N/A Germanium wafer list here is for your...

23-05-2018 Nhà cung cấp wafer Ge