Undoped InP Wafer

PAM-XIAMEN offer low doped InP wafer substrate, see the following:

InP wafer,2”  (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 16.0±1.0 mm;
Minor flat orientation – (0-11);
Major flat length – 8.0±1.0 mm;
Front side- polished, epi-ready;
Back side – polished;
Package – Cassette shipments, packed in the package of metalized polyethylene filled with an inert gas.

InP wafer,3”
Diameter – 76.2±0.5 mm;
Thickness – 600±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 22.0±1.0 mm;
Minor flat orientation – (0-11);
Major flat length – 12.0±1.0 mm;
Front side- polished, epi-ready;
Back side – polished;
Package – Cassette shipments, packed in the package of metalized polyethylene filled with an inert gas.

InP wafer,4”  (PAM-190507-INP)
Diameter – 4”;
Thickness – µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – XX±1.0 mm;
Minor flat orientation – (0-11);
Major flat length – XX±1.0 mm;
Front side- polished, epi-ready;
Back side – polished;
Package – Cassette shipments, packed in the package of metalized polyethylene filled with an inert gas.

For more information, send us email at victorchan@powerwaywafer.com