W – Tungsten Polycrystalline Metal Substrates

W – Tungsten Polycrystalline Metal Substrates

PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.

General Properties  for Tungsten

Symbol                   W
Atomic Number     74
Atomic Weight:      183.84
Crystal structure:   BCC
Lattice constant at room temperature:   0.316 nm
Density:                19.25 g/cm3
Melting Point:        3422 °C
Boiling Point:         5555 °C

Tungsten (W) Polycrystalline Substrate: 1″x1″x0.5 mm, two sides polished

W Polycrystalline Substrate: 10 x 10 x 0.5 mm, two sides polished

W Polycrystalline Substrate: 10 x 10 x 0.5 mm,one side polished

W – Tungsten Polycrystalline Metallic Foil: 125 Width x 200 Length x 0.1mm thick

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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