Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures

Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures

In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused by charged water drops and friction electricity of blue carrier foils, ultrasonic cleaning-induced splittering of small surface structures and EEPROM memory loss. Some examples allow valuable conclusions for failure analysis and perform hints how to reduce or eliminate the problem by tool modifications.

Fig. 1. Chipping-a border- or corner-crack caused by the wafer sawing.

Source: Microelectronics Reliability

If you need more information about Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].

2013-10-25 wafer sawing

Related Posts

LD Bare Bar for [email protected] 2mm

PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 880nm Filling Factor: 30% Output Power: 80W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author

Semiconductor Wafer of SiC/GaN for Optoelectronic Devices

The application fields of SiC wafers and GaN wafers are mainly divided into electronic power field, radio frequency field, optoelectronic field, and other fields. Among them, electronic power field and radio frequency field are the most important applications, and the advantages of using SiC material are obvious. These two areas have [...]

2021-04-20meta-author

MgF2 crystal

PAM XIAMEN offers MgF2 crystal. MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications Xtl Structure Lattice (A) Melting Point Density g/cm3 Hardness Thermal Expansion Refractive index Tetragonal a = 4.64 1255 oC 3.18 6 (mohs) 13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c ho 1.37740 　 c = 3.06 　　　　 he 1.38945 MgF2 [...]

2019-05-10meta-author

Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans [...]

2013-11-20meta-author CdZnTe, Epitaxial growth, Semiconductors, Thick films

ZnO on Glass/Fused silica

PAM XIAMEN offers ZnO on Glass/Fused silica. ZnO(100nm) on Fused Silca 10x10x0.5mm ZnO(150nm) Coated Sodalime Glass 1″ x1″x 0.7mm ZnO(50nm) on Fused Silca 10x10x0.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway [...]

2019-04-29meta-author

Silicon Ingots-2

PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm) FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm) FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]

2019-03-08meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.