

Highlights • The temperature-dependent strengths of CVD ZnS were obtained. • The thermal shock behavior of infrared window was studied by finite element method. • Rapid heating thermal shock tests were conducted to validate the numerical results. Abstract The thermal shock failure has been recognized as one of key failure modes of [...]
Low Temperature GaAs Test Report https://www.powerwaywafer.com/low-temperature-gaas-2.html For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]
PAM XIAMEN offers GaN HEMT Epitaxial Wafers. Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high-electron-mobility transistors (HEMT) wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. We sell directly from the factory, and therefore can offer the best prices on the [...]
PAM XIAMEN offers thinnest Silicon Wafers. We have sold Silicon Wafers with a 2 micron thickness. But our biggest selling thin silicon wafer is: 100mm P(100) 1-10 ohm-cm 50um SSP and DSP TTV <2um Please let us know what specs you would like us to quote? For more information, [...]
This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer-8 Diameter: 150 mm N type Orientation: (100) Thickness: 675±10μm Resistivity 6,000-10,000Ωcm Double Side Polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com