

PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 880nm Filling Factor: 30% Output Power: 80W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]
The application fields of SiC wafers and GaN wafers are mainly divided into electronic power field, radio frequency field, optoelectronic field, and other fields. Among them, electronic power field and radio frequency field are the most important applications, and the advantages of using SiC material are obvious. These two areas have [...]
PAM XIAMEN offers MgF2 crystal. MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications Xtl Structure Lattice (A) Melting Point Density g/cm3 Hardness Thermal Expansion Refractive index Tetragonal a = 4.64 1255 oC 3.18 6 (mohs) 13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c ho 1.37740 c = 3.06 he 1.38945 MgF2 [...]
Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans [...]
PAM XIAMEN offers ZnO on Glass/Fused silica. ZnO(100nm) on Fused Silca 10x10x0.5mm ZnO(150nm) Coated Sodalime Glass 1″ x1″x 0.7mm ZnO(50nm) on Fused Silca 10x10x0.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm) FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm) FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]