

The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]
Coulometric determination of arsenic in gallium arsenide crystal wafers The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated [...]
PAM XIAMEN offers MoSe2 crystal. MoSe2 is a layered material with strong in-plane bonding and weak out-of-plane interactions. These interactions lead to exfoliation into two-dimensional layers of single unit cell thickness. In addition, MoSe2 have sizable bandgaps that change from indirect to direct in [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
PAM-256 multi-pixel energy spectrum imaging module is composed of one or several imaging unit. The CZT imaging unit is made of 16×16 pixel detector. With back-end ASIC, it can detect energy ranges from 10KeV~700KeV, fully satisfied γcamera and SPECT. Direct splice: The module has a time [...]
PAM XIAMEN offers Aluminum on Silicon Wafer. Aluminum Film on Silicom Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm Aluminum Film on Silicon Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm Aluminum Film on Silicon Wafer, [...]