PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27meta-author
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]
PAM XIAMEN offers Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates.
Nb: SrTiO3, Niobium doped Strontium Titanate Crystal and Substrates
Main Parameters
Nb:SrTiO3
A
B
C
D
Nb Concentration (wt%)
Customized
0.7
0.5
0.05
Resistivity ohm-cm
Customized
0.007
0.05
0.08
Migration rates cm2/vs
Customized
8.5
8.5
6.5
Characteristics
Nb: SrTiO3 and SrTiO3 have a similar structure, but Nb: STO has an high electrical conductivity. Typical STO are insulators
Size
10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Ф15, Ф20, Ф [...]
2019-03-14meta-author
New InGaAs Structure Wafer
Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a [...]
PAM XIAMEN offers 6″ CZ Silicon Wafer
N Type/Arsenic doped
Orientation (100)
Thickness 625±15μm
Resistivity 0.002-0.004Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤10μm
TIR ≤5μm
STIR≤2μm (15mm*15mm)
Bow/Warp≤30μm
Front Side: Chemical Mechanical
Polished
Back side:
BSD Yes
Poly(Å) No
Oxide Back Seal(Å)5000±500 Å
Edge Oxide Strip(mm):0.8
Back side Laser Mark: No
Particle ≤10 @≥0.3㎛
METAL IMPURITIES:
≤ 2.5E10(Fe Cr Cu Ni)at/㎠
≤ 5E10(Al Zn [...]
2021-03-18meta-author
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
SPECIFICATIONS:
Crystal structure: Monoclinic
Lattice parameter:
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Density: 5.95(g/cm3)
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Conductivity: Semi-insulating
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm,Ф1″ (1 inch diameter). Special [...]
2019-03-12meta-author