GaN Epitaxial Technology
GaN technology today is important technology player- Gallium Nitride on Silicon Carbide (GaN on SiC), Gallium Nitride on Silicon (GaN on Si) and Gallium Nitride on Sapphire (GaN on Sapphire). They are used in LED, RF and microwave devices. We can see [...]
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
76.2
N
Phos
FZ
-100
>3000
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
76.2
N
Phos
CZ
-100
350-400
P/E/OX
PRIME
76.2
N
As
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
N
Phos
FZ
-100
>3000
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/WTOx
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
400-450
P/E
PRIME
76.2
N
Phos
CZ
-100
450-500
P/P
PRIME
76.2
N
Phos
CZ
-100
500-550
P/E
PRIME
76.2
N
Phos
CZ
-100
950-1000
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
2018-06-28meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2063
p-type Si:B
[111]
2″
500
P/P
0.003–0.005
Prime, 2 Flats (2nd @ 45°), hard cst
PAM2064
p-type Si:B
[111]
2″
280
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2065
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2066
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2067
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime, 1Flat, [...]
2019-02-18meta-author
InGaN epi-wafers
PAM-XIAMEN offers InGaN epi-wafers with MQWs as follows:
2-inch GaN epi-wafers – PAM190611-LED
Orientation
C(0001) 0.2±0.1 grad. to m-axis (right relative to the OF);
0±0.25 grad. to a-axis (drawing)
Diameter
50.8±0.15 mm
Thickness
430±10 um
Substrate profile:
—
Shape
Cone
Width
2.7 um
Height
1.7 um
Step
0.3 um
Front side
Polished, epi-ready (Ra<0.3 nm)
Back side
polished 1.0um
Grade
optical
OF length
16±1 mm
OF orientation
a-axis ±0,25 grad
Bow
< [...]
2020-07-14meta-author