Epi/Thin Film on Substrate
GaN Substrate/Template
SiO2+Si3N4 on Silicon wafer Substrate
GaAs/AlGaAs on GaAs (Si) Substrate
SiC 4H Film on 4H-SiC Substrate
AlN Thin Film Substrate
Aluminum Film Substrate
Silicon Nitride on Corning 7980 Substrate
La0.7Sr0.3MnO3 + PbZr(x)Ti(1-x)O3 on Nb(SrTiO3) substrate
Diamond on Silicon Wafer Substrate
Ag Conductive Film（Planarized silver nanowir）substrate
FTO Film on Substrates
Silicon Nitride [...]
2018-07-10meta-author
Superconductor Substrates
Crystal
Structure
M.P.
Density
Thermal Expansion
Dielectric constant
Growth Tech. & max. size
standard 1or 2 sides epi polished wafer
oC
g/ cm3
LSAT
Cubic
1840
6.74
10
22
CZ
20x20x0.5mm
(LaAlO3)0.3 -(Sr2AlTaO8)0.7
a=3.868 Å
Ø35mm
10x10x0.5mm
LaAlO3
Rhombo.
2100
6.51
9.2
24.5
CZ
Ø3″x0.5mm
a=3.790 Å
Ø3″
Ø2″x0.5mm
c=13.11 Å
Ø1″x0.5mm
10x10x0.5mm
MgO
Cubic
2852
3.58
12.8
9.8
Flux
Ø2″x0.5mm
a=4.21 Å
Ø2″
10x10x0.5mm
NdGaO3
Orthor.
1600
7.57
7.8
25
CZ
Ø2″x0.5mm
a=5.43 Å
Ø2″
10x10x0.5mm
b=5.50 Å
c=7.71 Å
SrTiO3
Cubic
2080
5.12
10.4
300
vernuil
10x10x0.5mm
a=3.90 Å
Ø30mm
SrLaAlO4
Tetrag.
1650
16.8
CZ
10x10x0.5mm
a=3.756 Å
Ø20mm
c=12.63 Å
YAlO3
Orthor.
1870
4.88
2 ~ 10
16`20
CZ
10x10x0.5mm
a=5.176 Å b=5.307 Å
Ø30mm
c=7.355 Å
YSZ
Cubic
~2500
5.8
10.3
27
Flux
Ø2″x0.5mm
a=5.125 Å
Ø2″
10x10x0.5m
2018-07-10meta-author
Substrates for III-V nitride Film Deposition
Crystal
Structure
M.P.
Density
Lattice Mis-match to GaN
Thermal Expansion
Growth Tech. .& Max size
Standard substrate size (mm)
oC
g/cm3
(10-6/k)
SiC
(6H as example)
Hexagonal
~2700
3.21
3.5 % atori.
10.3
CVD
Ø2″ x 0.3,Ø3″x0.3
a=3.073 Å
20x20x0.3,15x15x0.3
c=15.117 Å
Ø3“
10x10x0.3,5x5x0.3
subl.
1 side epi polished
Al2O3
Hexagonal
2030
3.97
14% atori.
7.5
CZ
Ø50 x 0.33
a=4.758 Å
Ø25 x 0.50
c=12.99 Å
Ø2”
10x10x0.5
1 or 2 sides epi polished
LiAlO2
Tetragonal
1900 ~
2.62
1.4 % atori.
/
CZ
10x10x0.5
a=5.17 Å
Ø20 [...]
2018-07-10meta-author
Ge Wafer Substrate-Germanium
No.
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
(mm)
(μm)
Ω·cm
Orientation
/cm2
1-100
Ge
(100)
50.8
500±25
SSP
0.0138-0.02
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500
SSP
≥30
N/undoped
N/A
N/A
<5A
1-100
Ge
(100)
50.8
500
SSP
58.4-63.4
N/undoped
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-1
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
1000
DSP
>30
N/A
(110)
N/A
N/A
1-100
Ge
(100)
50.8
2000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
4000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(111)/(110)
50.8
200000
N/A
5-20
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
400
SSP
<0.4
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
50.8
4000±10
DSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
350
SSP
1-10
P/Ga
(110)
≤5000
N/A
PAMP20295
Ge
(100)
50.8
500±25
SSP
2-10
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
N/Sb
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
P/Ga
(110)
≤5000
N/A
1-100
Ge
(111)
60
1000
As cut
>30
N/A
(110)
<3000
N/A
1-100
Ge
(100)
100
N/A
SSP
<0.019
P/Ga
(110)
<500
N/A
1-100
Ge
(100)
100
1000±25
SSP
≥30
N/undoped
N/A
N/A
N/A
1-100
Ge
(100) off 6°or off 9°
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)
100
500
DSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)6°off (111)
100
185±15
DSP
0.01-0.05
N/A
(110)
≤5000
<5A
1-100
Ge
(100)6°off (110)
100
525±25
SSP
0.01-0.04
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
1000±15
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
750±25
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
500±25
SSP
10-30
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(111)
100
500±25
SSP
<0.4
N/Sb
N/A
N/A
N/A
1-100
Ge
(100)6°off-cut toward(111)A
100
175±25
SSP
0.003-0.009
P/Ga
(0-1-1) (0-11)
<100
N/A
PAM210802
Ge
(100)
100
175
DSP
<0.02
P
N/A
N/A
N/A
1-100
Ge
(310)±0.1°
100
200±15
DSP
>20
N/A
N/A
N/A
N/A
1-100
Ge
(111)
150
600-700
N/A
>30
N/A
(110)
N/A
N/A
Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial [...]
Other Wafers
ZnO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
ZnO
(0001)
10×10
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(10-10)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
N/A
14X14
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
15X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
As cut
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
2000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5×5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(11-20)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
As a ZnO semiconductor wafer supplier, we offer ZnO semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
MgO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
MgO
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
YSZ Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(111)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
20×20
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
30×30
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a YSZ wafer supplier,we offer YSZ wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
STO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
STO
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
LSAT Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
LSAT
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
2000
SSP
N/A
N/A
N/A
N/A
<0.5
As a LSAT wafer supplier,we offer LSAT wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
TiO2 Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime [...]
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb
InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team
3)2”InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness：500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD（cm -2 ）:<15000
SSP
5)2”InAs
Type/Dopant:N/P
Orientation ：(100),
Carrier Concentration(cm-3)：(5-10)E17,
Thickness：500 [...]
