Wafers Used to Deposit Thin Film Electronic Devices

PAM XIAMEN offers Wafers Used to Deposit Thin Film Electronic Devices . If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity.

Our clients use Dry Thermal Oxide for making thin-film electronic devices.

Client:

“We are making thin-film electronic devices on the surface of the silicon dioxide, and using the silicon and a electric field back-gate. With the wet thermal oxide, we find that the oxide leaks significantly, leading to an unusable device. Thus we need dry oxide.”

The spec used for this:

100mm P(100) 0.001-0.005 ohm-cm SSP 500um with 300nm of Dry Oxide on Polished Side Only

Please let us know what spec we can quote for you.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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